Sputter 2 (SFI Endeavor)

This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.

Sputter 2 (SFI Endeavor) Tool Type Vacuum Deposition Location Bay 1 Supervisor Brian Lingg Supervisor Phone (805) 893-8145 Supervisor E-Mail lingg_b@ucsb.edu Description 3 chamber Cluster Sputter Manufacturer Endeavor Vacuum Deposition Recipes Sign up for this tool

About

This is a three chamber cluster tool for DC and AC reactive sputtering of metals and dielectrics from 8” cylindrical or 2-piece (for AC) targets. The chamber is configured for 4” diameter wafers or equivalently sized plates that can secure smaller piece samples. Samples are loaded into a cassette system capable of holding 20 wafers. The system is computer controlled through a GUI. Heating of the substrate to several hundred degrees Celcius is possible through a heating lamp module. Chamber 1 is set up for AC reactive sputtering of Al, Al₂O₃, AlN, SiO₂, or SiN. Chamber 2 is set up for DC reactive sputtering of Ti, W, TiN, TiO₂, and W-based oxides. Chamber 3 is set up for Al or Au metal sputtering and has RF back-sputtering capability on the sample for sample cleaning prior to deposition.

Detailed Specifications

• Multiple 4” diameter wafer capable system
• Pieces possible through appropriate carrier design
• Full programmable control through GUI
• Heating of substrate to several hundred degrees Celcius
• Chamber 1: AC sputtering of Si, SiN, SiO₂, AlN, Al₂O₃ films
  • AlN rate ~ 4.5 nm/min.
  • Al₂O₃ ~ 6 nm/min.
  • SiO₂ rate ~ 4.5 nm/min.
• Chamber 2: DC sputtering of Ti, TiN, TiO₂, W, and W-oxides
  • Ti rate ~ 200 nm/min.
• Chamber 3: DC sputtering of Al or Au. RF back-sputtering with Argon
  • Al Dep rate ~ 300-400 nm/min.

Documentation

• Operating Instructions