Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer): Difference between revisions

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{| class="wikitable"
| colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
|
|-
|Date
Line 7 ⟶ 8:
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (<sup>o</sup>)
|SEM Images
|-
|10/5/2018
Line 13 ⟶ 15:
|0.74
|77.9
|[https://wwwwiki.nanotech.ucsb.edu/wiki/index.phpimages/f/f1/File:SiO2_Etch_using_ICP2_with_O2-a.pdf]▼
|-
|1/28/2019
Line 19 ⟶ 22:
|0.77
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fa/SiO2_Etch_using_ICP2_with_O2-a.pdf]
|-
|3/6/2019
|I21903
|88.5
|0.80
|79.4
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/dc/SiO2_Etch_using_ICP2_with_O2-3-06-2019.pdf]
|-
|7/12/2019
|I21906
|91.9
|0.69
|78.1
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/04/I2190605.pdf]
|}
▲[https://www.nanotech.ucsb.edu/wiki/index.php/File:SiO2_Etch_using_ICP2_with_O2-a.pdf]

Latest revision as of 01:26, 7 April 2020

ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#01 95.2 0.74 77.9 [1]
1/28/2019 I21902 92.1 0.77 [2]
3/6/2019 I21903 88.5 0.80 79.4 [3]
7/12/2019 I21906 91.9 0.69 78.1 [4]
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