Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)
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ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
Date
Sample#
Etch Rate (nm/min)
Etch Selectivity (SiO2/PR)
Averaged Sidewall Angle (
o
)
SEM Images
10/5/2018
SiO2#01
95.2
0.74
77.9
[1]
1/28/2019
I21902
92.1
0.77
[2]
3/6/2019
I21903
88.5
0.80
79.4
[3]
7/12/2019
I21906
91.9
0.69
78.1
[4]
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