RIE Etching Recipes: Difference between revisions
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{{recipes|Dry Etching}} |
{{recipes|Dry Etching}} |
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=[[RIE |
=[[RIE 2 (MRC)]]= |
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=[[RIE 2 (MRC)]] = |
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==CdZnTe Etching (RIE 2)== |
==CdZnTe Etching (RIE 2)== |
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*[ |
*[//wiki.nanotech.ucsb.edu/w/images/f/f5/11-CZT_etching-1.pdf CdZnTe Etch Recipes - CH<sub>4</sub>-H<sub>2</sub>-Ar] |
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==ZnS Etching (RIE 2)== |
==ZnS Etching (RIE 2)== |
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*[ |
*[//wiki.nanotech.ucsb.edu/w/images/b/b4/ZnS_Plasma_Etch-1.pdf ZnS Etch Recipe - CH<sub>4</sub>-H<sub>2</sub>-Ar] |
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==ITO Etching (RIE 2)== |
==ITO Etching (RIE 2)== |
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*[ |
*[//wiki.nanotech.ucsb.edu/w/images/f/f4/RIE2-ITO-Etch-MHA-Plasma-RevA.pdf ITO Etch Recipes - CH<sub>4</sub>-H<sub>2</sub>-Ar] |
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==InP-InGaAsP-InGaAlAs Etching (RIE 2)== |
==InP-InGaAsP-InGaAlAs Etching (RIE 2)== |
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| ⚫ | |||
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=[[RIE 3 (MRC)]] = |
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==SiO<sub>2</sub> Etching (RIE 3)== |
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*[[media:SiO2-Etch-Recipe-using-RIE-3-a.pdf|SiO<sub>2</sub> Etch Recipe with a very low surface damage - CHF<sub>3]] |
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==SiN<sub>x</sub> Etching (RIE 3)== |
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*[[media:|SiO<sub>x</sub> Etch Recipe with a very low surface damage - CHF<sub>3]] |
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=[[RIE 5 (PlasmaTherm)]] |
=[[RIE 5 (PlasmaTherm)]]= |
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==AlGaAs\GaAs Etching (RIE 5)== |
==AlGaAs\GaAs Etching (RIE 5)== |
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*[ |
*[//wiki.nanotech.ucsb.edu/w/images/b/b5/13-GaAs-AlGaAs_Etching-RIE-5.pdf GaAs\AlGaAs Etch Recipes - BCl<sub>3</sub>-SiCl<sub>4</sub>] |
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==GaN Etching (RIE 5)== |
==GaN Etching (RIE 5)== |
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*[ |
*[//wiki.nanotech.ucsb.edu/w/images/c/cb/08-Plasma_Etching_of_GaN-RIE5.pdf GaN Etch Recipes - Cl<sub>2</sub>-BCl<sub>3</sub>-Ar] |
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==Photoresist and ARC (RIE 5)== |
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===DUV42P (AR2) etching=== |
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*O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec |
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*No need to pump/purge, can etch right away. |
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*No helium cooling, Run in manual mode. |
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Latest revision as of 22:37, 6 August 2024
Back to Dry Etching Recipes.
RIE 2 (MRC)
CdZnTe Etching (RIE 2)
ZnS Etching (RIE 2)
ITO Etching (RIE 2)
InP-InGaAsP-InGaAlAs Etching (RIE 2)
RIE 5 (PlasmaTherm)
AlGaAs\GaAs Etching (RIE 5)
GaN Etching (RIE 5)
Photoresist and ARC (RIE 5)
DUV42P (AR2) etching
- O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec
- No need to pump/purge, can etch right away.
- No helium cooling, Run in manual mode.