Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer): Difference between revisions

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|[https://www.nanotech.ucsb.edu/wiki/images/f/f1/SiO2_Etch_using_ICP2_with_O2.pdf]
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f1/SiO2_Etch_using_ICP2_with_O2.pdf]
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|[https://www.nanotech.ucsb.edu/wiki/images/f/fa/SiO2_Etch_using_ICP2_with_O2-a.pdf]
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fa/SiO2_Etch_using_ICP2_with_O2-a.pdf]
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|[https://wiki.nanotech.ucsb.edu/wiki/images/0/04/I2190605.pdf]
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Latest revision as of 01:26, 7 April 2020

ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#01 95.2 0.74 77.9 [1]
1/28/2019 I21902 92.1 0.77 [2]
3/6/2019 I21903 88.5 0.80 79.4 [3]
7/12/2019 I21906 91.9 0.69 78.1 [4]
Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_etching_SiO2_with_CHF3/CF4/O2_(using_this_recipe_only_for_Fluorine_etch_of_the_underneath_layer)&oldid=157769"