PECVD 2 (Advanced Vacuum): Difference between revisions

Latest revision as of 19:33, 27 August 2024

PECVD 2 (Advanced Vacuum)

Location	Bay 2
Tool Type	Vacuum Deposition
Manufacturer	Plasma-Therm
Description	Vision 310 Advanced Vacuum PECVD

Primary Supervisor	Michael Barreraz
	(805) 893-4147
	mikebarreraz@ece.ucsb.edu

Secondary Supervisor	Don Freeborn

Recipes	Vacuum Deposition Recipes

SignupMonkey:	Sign up for this tool

Films/Gases: This open-load system is dedicated to PECVD of SiO₂, SiN_x, SiO_xN_y, and a-Si using Silane (2%SiH₄, 98% He), N₂O, NH₃, and N₂ gases.
Size: The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run.
Temperature: Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C.
Low-Stress Si₃N₄: The system is equipped with a dual generator, dual frequency option for growth of Low-stress Nitride films.
- These films alternate between thin (<10nm) compressive and tensile layers.
- The Low-Stress Si3N4 film recipe are tested approx. monthly, and kept within ±100MPa. Data can be found at Recipes (below) > Low-Stress Nitride.

Recipes can be found on the PECVD Recipes Page:
- Recipes > Vacuum Deposition Recipes > PECVD Recipes > PECVD 2 - Advanced Vacuum
- Thin-Films recorded: SiO2, Si3N4 and Low-Stress Si3N4
- Historical (Process Control) Data is also shown here.
A list of all available deposited films can be found on the Vacuum Deposition Recipes page:
- Recipes > Vacuum Deposition Recipes

@@ Line 1: / Line 1: @@
-{{tool|{{PAGENAME}}
+{{tool2|{{PAGENAME}}
 |picture=PECVD2.jpg
 |type = Vacuum Deposition
-|super= Don Freeborn
+|super= Michael Barreraz
+|super2= Don Freeborn
 |phone=(805)839-7975
 |location=Bay 2
@@ Line 17: / Line 18: @@
 *'''Temperature''': Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C.
 *'''Low-Stress Si<sub>3</sub>N<sub>4</sub>''': The system is equipped with a dual generator, dual frequency option for growth of Low-stress Nitride films.
+**These films alternate between thin (<10nm) compressive and tensile layers.
 **The Low-Stress Si3N4 film recipe are tested approx. monthly, and kept within ±100MPa. Data can be found at Recipes (below) > [[PECVD Recipes#Historical Data 5|Low-Stress Nitride]].