ICP Etch 2 (Panasonic E626I): Difference between revisions
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|picture=ICP1.jpg |
|picture=ICP1.jpg |
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|type = Dry Etch |
|type = Dry Etch |
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|super= |
|super= Lee Sawyer |
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|super2= |
|super2= Tony Bosch |
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|phone=(805)839- |
|phone=(805)839-2123 |
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|location=Bay 2 |
|location=Bay 2 |
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|email=silva@ece.ucsb.edu |
|email=silva@ece.ucsb.edu |
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*'''Recipes > Dry Etch >''' [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29 '''<u>ICP2 Etching Recipes</u>'''] |
*'''Recipes > Dry Etch >''' [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29 '''<u>ICP2 Etching Recipes</u>'''] |
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**Starting point recipes for ICP2 specifically. |
**Starting point recipes for ICP2 specifically. |
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*'''Recipes > [https://wiki.nanotech.ucsb.edu/w/index.php?title=Dry_Etching_Recipes <u>Dry Etching Recipes</u>]''' |
*'''Recipes > [https://wiki.nanotech.ucsb.edu/w/index.php?title=Dry_Etching_Recipes <u>Dry Etching Recipes</u>]''' |
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**Table of all dry etching recipes, showing '''etched materials vs. tool''' etc. |
**Table of all dry etching recipes, showing '''etched materials vs. tool''' etc. |
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** |
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:[[File:ICP2 Process Control Data Example.jpg|alt=example ICP2 process control chart|none|thumb|250x250px|[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281]] |
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Latest revision as of 21:22, 6 November 2024
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About
This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down.
The system is also equipped with a red laser monitoring system from Intellemetrics for more precise etch stop control.
Detailed Specifications
- 1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
- Room Temp. – 80°C sample temperature for etching. Default 15°C Chuck temperature.
- Optimal Emission Monitoring
- Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
- Cl2, BCl3, (Ar or CHF3), (CF4 or SF6), N2, and O2 in etch chamber
- O2, N2, CF4, H2O Vapor for ashing chamber
- Single 6” diameter wafer capable system
- Pieces possible by mounting to 6” wafer
- 670nm laser endpoint detector with camera and simulation software: Intellemetrics LEP 500
Documentation
- Operating Instruction Manual
- Training Notes
- Gas Change Instructions
- Manual Wafer Transfer Instructions
- Laser Etch Monitor procedures
Online Training Video
- Panasonic ICP#2 Training Video
- Important: This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.
Recipes
- Recipes > Dry Etch > ICP2 Etching Recipes
- Starting point recipes for ICP2 specifically.
- Recipes > Dry Etching Recipes
- Table of all dry etching recipes, showing etched materials vs. tool etc.
Process Control Data
- Data showing "calibration" etches over time to test tool performance.
