RIE Etching Recipes: Difference between revisions
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*O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec |
*O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec |
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*No need to pump/purge, can etch right away |
*No need to pump/purge, can etch right away |
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*No helium cooling |
*No helium cooling |
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*Can run in manual mode |
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Latest revision as of 03:13, 17 July 2026
Back to Dry Etching Recipes.
RIE 2 (MRC)
CdZnTe Etching (RIE 2)
ZnS Etching (RIE 2)
ITO Etching (RIE 2)
InP-InGaAsP-InGaAlAs Etching (RIE 2)
RIE 5 (PlasmaTherm)
AlGaAs\GaAs Etching (RIE 5)
GaN Etching (RIE 5)
Photoresist and ARC (RIE 5)
DUV42P (AR2) etching
- O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec
- No need to pump/purge, can etch right away
- No helium cooling
- Can run in manual mode