Silicon Deep Etcher (Plasma-Therm SLR): Difference between revisions
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=Recipes= |
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=[[Si Deep RIE (PlasmaTherm/Bosch Etch)|Si Deep RIE (PlasmaTherm/Bosch Etch) - DECOMISSIONED]]= |
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'''This tool does not exist in this configuration any more, so these recipes are for Reference purposes Only!!!''' |
'''This tool does not exist in this configuration any more, so these recipes are for Reference purposes Only!!!''' |
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The machine was upgraded to be the new Plasma-Therm Fluorine ICP Etcher - the chamber configuration is now different, making these recipes invalid. |
The machine was upgraded to be the new Plasma-Therm Fluorine ICP Etcher - the chamber configuration is now different, making these recipes invalid. |
Latest revision as of 23:04, 6 August 2024
Recipes
This tool does not exist in this configuration any more, so these recipes are for Reference purposes Only!!! The machine was upgraded to be the new Plasma-Therm Fluorine ICP Etcher - the chamber configuration is now different, making these recipes invalid. For Deep Silicon Etching, the Plasma-Therm DSE-iii is often used. Some single-step Silicon etching is still performed on the SLR Fluorine ICP, due to the slower etch rate.
Bosch and Release Etch (Si Deep RIE)
- Bosch and Release Processes
- Ideal for deep (>>1µm), vertical etching of Silicon. Through-wafer etches are possible (requires carrier wafer).
- Etch rate depends on area of exposed silicon being etched.
- Al2O3 mask (ALD or Sputter) has >9000:1 selectivity
- SiO2 (PECVD) mask has ~100:1 selectivity
- Thermal SiO2 has ~300:1 selectivity.