Latest revision as of 18:04, 7 November 2024

Process Control Data are standardized processes, run by the NanoFab, allowing for day-to-day or year-by-year comparisons of a tool's performance at the process level. This is similar Statistical Process Control (SPC).

These are the same links are found on individual tool pages, in the <<tool page>> > Process Control section.

Data are collected by our Process Group Interns and reviewed by Process Group Staff.

Deposition (Process Control Data)

Process Control data for various deposition tools in the lab.

PECVD #1 (PlasmaTherm 790)

PECVD #2 (Advanced Vacuum)

ICP-PECVD (Unaxis VLR Dep)

Ion Beam Sputter Deposition (Veeco Nexus)

Old Data (Pre 2022)

Old data in a different format can be found below:

Old Deposition Data - 2021-12-15

Etching (Process Control Data)

Process Control data for various dry etching tools in the lab.

PlasmaTherm SLR Fluorine Etcher

SiO₂ Etching (FL-ICP Process Control)

We have found that SiO₂ etching is fairly insensitive to chamber condition.

Old SiO₂ Process Control Data

SiO₂ Etching with CHF₃/CF₄ (FL-ICP) - No data prior to 2023-01-20

Si Etching (FL-ICP Process Control)

This Si etch is much more sensitive to chamber condition, allowing us to detect chamber contamination faster.

Recipe: SiVertHFv2 - C₄F₈/SF₆/CF₄ etch of 100mm Silicon Wafer with ~50% open area and resist mask

Panasonic ICP #1

Old Process Control Data

SiO₂ Etch with CHF₃/CF₄ (Panasonic 1) - No data prior to 2023-01-20

Panasonic ICP#2

Old Process Control Data

SiO₂ Etching with CHF₃/CF₄ - ICP2 - No data prior to 2023-01-20

Unaxis VLR Etch

InP Etching with Cl₂/N₂ @ 200°C - Unaxis Etch

Oxford PlasmaPro Cobra Etcher

InP Ridge Etch: Cl₂/CH₄/H₂/60°C

Calibration / Process testing data taken using the "InP Ridge Etch" process: Cl2/CH4/H2 @ 60°C, 1cm piece with ~50% SiO2 hardmask.

Old InP Ridge Etch Data

InP Ridge Etch with Cl₂/CH₄/H₂ @ 60°C - No data prior to 2023-01-20

GaN Etch (Cl2/BCl3/Ar/200°C)

~1.2µm deep GaN etch with Cl2/BCl3/Ar at 200°C

PlasmaTherm DSEIII Deep Silicon Etcher

Si Bosch Etching C₄F₈/SF₆/Ar

Recipe: STD_Bosch_Si (⭐️Production), on 100mm Si Wafer with ~50% open area, photoresist mask, ~40µm deep

Lithography (Process Control Data)

Process Control Data for Nanofab Lithography/patterning tools.

Stepper #3 (ASML DUV)

The Process Group regularly measures data on lithography Critical Dimension ("CD") and Wafer-stage Particulate Contamination for this tool, using a sensitive lithography process that will reveal small changes in Dose repeatability and wafer flatness.
Plots of CD Repeatability
Data for CD Uniformity and Particulate Contamination

Example of Data Table with SEM's of 320nm features. Click for full data table.

Example SPC Chart - Measured Critical Dimension "CD" versus Date. Click for charts.

@@ Line 1: / Line 1: @@
-Process Control Data are standardized process, run by staff, allowing for day-to-day or year-by-year comparisons of a tool's performance.  This is similar (but not identical to) [https://en.wikipedia.org/wiki/Statistical_process_control Statistical Process Control].
+Process Control Data are standardized processes, run by the NanoFab, allowing for day-to-day or year-by-year comparisons of a tool's performance at the process level.  This is similar [https://en.wikipedia.org/wiki/Statistical_process_control Statistical Process Control (SPC)].
-These are the same links found on individual tool pages, in the '''''Recipes > <<tool page>> > Process Control''''' section.
+These are the same links are found on individual tool pages, in the '''''<<tool page>> > Process Control''''' section.
 __TOC__
+Data are collected by our [https://nanofab.ucsb.edu/workforce#internships Process Group Interns] and reviewed by [[Staff List#Process Group|Process Group Staff]].
 =Deposition (Process Control Data)=
 ''Process Control data for various deposition tools in the lab.''
@@ Line 54: / Line 54: @@
 ==[[ICP Etching Recipes#Process Control Data .28Fluorine ICP Etcher.29|PlasmaTherm SLR Fluorine Etcher]]==
-=== SiO2 Etching (FL-ICP Process Control) ===
+=== SiO<sub>2</sub> Etching (FL-ICP Process Control) ===
+''We have found that SiO<sub>2</sub> etching is fairly insensitive to chamber condition.''
+*[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit?usp=sharing SiO<sub>2</sub> Etching with CHF<sub>3</sub>/CF<sub>4</sub> - '''Etch Data''']
+*[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281 SiO<sub>2</sub> Etching with CHF<sub>3</sub>/CF<sub>4</sub> - '''Plots'''][[File:FL-ICP Process Control Data Example.jpg|alt=example of Process Control Charts|none|thumb|242x242px|[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281]]
+====Old SiO<sub>2</sub> Process Control Data====
-*[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit?usp=sharing SiO<sub>2</sub> Etching with CHF3/CF4 - '''Etch Data''']
-*[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281 SiO<sub>2</sub> Etching with CHF3/CF4 - '''Plots'''][[File:FL-ICP Process Control Data Example.jpg|alt=example of Process Control Charts|none|thumb|242x242px|[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281]]
+*[[Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher|SiO<sub>2</sub> Etching with CHF<sub>3</sub>/CF<sub>4</sub> (FL-ICP]]) - ''No data prior to 2023-01-20''
-====OLD SiO2 Process Control Data====
-*[[Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher|SiO<sub>2</sub> Etching with CHF3/CF4 (FL-ICP]]) - ''No data prior to 2023-01-20''
 === Si Etching (FL-ICP Process Control) ===
+''This Si etch is much more sensitive to chamber condition, allowing us to detect chamber contamination faster.''
-'''Si Etching C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> (Fluorine ICP Etcher)'''
-*SiVertHFv2 - Full Wafer Si etching with ~50% open area and resist mask
+*'''Recipe: SiVertHFv2''' - C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> etch of 100mm Silicon Wafer with ~50% open area and resist mask
 *[https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=0#gid=0 Si Etching with C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> - '''Etch Data''']
 *[https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=1804752281#gid=1804752281 Si Etching with C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> - '''Plots'''][[File:FICP-Si.png|alt=example of Process Control Charts|none|thumb|242x242px|[https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=1804752281#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=1804752281#gid=1804752281]]
 ==[[ICP Etching Recipes#Process Control Data .28Panasonic 1.29|Panasonic ICP #1]]==
@@ Line 83: / Line 81: @@
 ==[[ICP Etching Recipes#Process Control Data .28Panasonic 2.29|Panasonic ICP#2]]==
-*[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit?usp=sharing SiO2 Etch with CHF3/CF4 - '''Etch Data''']
+*[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit?usp=sharing SiO<sub>2</sub> Etch with CHF<sub>3</sub>/CF<sub>4</sub> - '''Etch Data''']
-*[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281 SiO2 Etch with CHF3/CF4 - '''Plots'''][[File:ICP2 Process Control Data Example.jpg|alt=example ICP2 process control chart|none|thumb|250x250px|[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281]]
+*[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281 SiO<sub>2</sub> Etch with CHF<sub>3</sub>/CF<sub>4</sub> - '''Plots'''][[File:ICP2 Process Control Data Example.jpg|alt=example ICP2 process control chart|none|thumb|250x250px|[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281]]
 ====Old Process Control Data====
-*[[Test Data of etching SiO2 with CHF3/CF4|SiO2 Etching with CHF3/CF4 - ICP2]] - ''No data prior to 2023-01-20''
+*[[Test Data of etching SiO2 with CHF3/CF4|SiO<sub>2</sub> Etching with CHF<sub>3</sub>/CF<sub>4</sub> - ICP2]] - ''No data prior to 2023-01-20''
 ==[[ICP Etching Recipes#Process Control Data .28Unaxis VLR.29|Unaxis VLR Etch]]==
-*[[Unaxis VLR Etch - Process Control Data|InP Etching with Cl2/N2 @ 200°C - Unaxis Etch]]
+*[[Unaxis VLR Etch - Process Control Data|InP Etching with Cl<sub>2</sub>/N<sub>2</sub> @ 200°C - Unaxis Etch]]
 ==[[ICP Etching Recipes#Process Control Data .28Oxford ICP Etcher.29|Oxford PlasmaPro Cobra Etcher]]==
+=== InP Ridge Etch: Cl<sub>2</sub>/CH<sub>4</sub>/H<sub>2</sub>/60°C ===
 ''Calibration / Process testing data taken using the "InP Ridge Etch" process: Cl2/CH4/H2 @ 60°C, 1cm piece with ~50% SiO2 hardmask.''
@@ Line 100: / Line 100: @@
 *[https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit#gid=1804752281 "Std InP Ridge Etch" Cl<sub>2</sub>/CH<sub>4</sub>/H<sub>2</sub>/60°C - '''Plots'''][[File:Oxford-ICP-Etch Process Control Data Example.jpg|alt=example SPC chart for Oxford ICP Etcher|none|thumb|225x225px|[https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit#gid=1804752281]]
-====Old Process Control Data====
+====Old InP Ridge Etch Data====
+*[[Oxford ICP Etcher - Process Control Data|InP Ridge Etch with Cl<sub>2</sub>/CH<sub>4</sub>/H<sub>2</sub> @ 60°C]] - ''No data prior to 2023-01-20''
+=== GaN Etch (Cl2/BCl3/Ar/200°C) ===
+''~1.2µm deep GaN etch with Cl2/BCl3/Ar at 200°C''
+* [https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=0#gid=0 Etch Data Tables]
+* [https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=507237279#gid=507237279 Plots]
+== [[DSEIII (PlasmaTherm/Deep Silicon Etcher)|PlasmaTherm DSEIII Deep Silicon Etcher]] ==
-*[[Oxford ICP Etcher - Process Control Data|InP Ridge Etch with Cl2/CH4/H2 @ 60°C]] - ''No data prior to 2023-01-20''
+=== '''Si Bosch Etching C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/Ar''' ===
+*Recipe: ''STD_Bosch_Si (⭐️Production),'' on 100mm Si Wafer with ~50% open area, photoresist mask, ~40µm deep
+*[https://docs.google.com/spreadsheets/d/1xQcdUH560nT928miZMeP7xxQSwHz_a_EB9s_Kb1LSfg/edit?gid=0#gid=0 Si Etching with C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/Ar - '''Etch Data''']
+*[https://docs.google.com/spreadsheets/d/1xQcdUH560nT928miZMeP7xxQSwHz_a_EB9s_Kb1LSfg/edit?gid=1804752281#gid=1804752281 Si Etching with C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/Ar - '''Plots'''][[File:DSE plot.png|alt=example of Process Control Charts|none|thumb|[https://docs.google.com/spreadsheets/d/1xQcdUH560nT928miZMeP7xxQSwHz_a_EB9s_Kb1LSfg/edit?gid=1804752281#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1xQcdUH560nT928miZMeP7xxQSwHz_a_EB9s_Kb1LSfg/edit?gid=1804752281#gid=1804752281]]
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Process Group - Process Control Data: Difference between revisions

Latest revision as of 18:04, 7 November 2024

Contents

Deposition (Process Control Data)

PECVD #1 (PlasmaTherm 790)

PECVD #2 (Advanced Vacuum)

ICP-PECVD (Unaxis VLR Dep)