Process Group - Process Control Data: Difference between revisions
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Data are collected by our [https://nanofab.ucsb.edu/workforce#internships Process Group Interns] and reviewed by [[Staff List#Process Group|Process Group Staff]]. |
Data are collected by our [https://nanofab.ucsb.edu/workforce#internships Process Group Interns] and reviewed by [[Staff List#Process Group|Process Group Staff]]. |
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=Deposition (Process Control Data)= |
=Deposition, Dielectric (Process Control Data)= |
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[[File:PECVD SPC Chart Example.png|alt=SPC chart example|thumb|228x228px|Example Process Control Charts (SPC) for thin-film DepCals.]] |
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[[File:Surfscan 230113A7G2 after low particles.jpg|alt=screenshot of surfscan particle count|thumb|205x205px|Example particle counts taken on each tool+film.]] |
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[[File:PECVD1 SiO2 F50 WaferMap example.jpg|alt=Screenshot of Filmetrics F50 wafermap of typical DepCals film|thumb|215x215px|Example of DepCals Thickness/Refractive Index uniformity measurement (4% shown here).]] |
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''Process Control data for various deposition tools in the lab.'' |
''Process Control data for various deposition tools in the lab.'' |
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*[[Old Deposition Data - 2021-12-15]] |
*[[Old Deposition Data - 2021-12-15]] |
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=Deposition, Metal (Process Control Data)= |
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''Process Control data for various Metal evaporators in the lab.'' |
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== [[E-Beam 4 (CHA)]] == |
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*E-Beam 4 Ti: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=0#gid=0 Titanium Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=384597990#gid=384597990 Titanium Plots] |
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*E-Beam 4 Au: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=834604706#gid=834604706 Gold Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=721807140#gid=721807140 Gold Plots] |
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*E-Beam 4 Cr: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=1629968393#gid=1629968393 Chromium Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=701729811#gid=701729811 Chromium Plots] |
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*E-Beam 4 Ni: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=649905488#gid=649905488 Nickel Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=1525197973#gid=1525197973 Nickel Plots] |
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== [[E-Beam 1 (Sharon)]] == |
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''Coming Soon...'' |
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=== GaN Etch (Cl2/BCl3/Ar/200°C) === |
=== GaN Etch (Cl2/BCl3/Ar/200°C) === |
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Recipe: , on 1cm x 1cm ''~1.2µm deep GaN etch with Cl2/BCl3/Ar at 200°C.'' Sapphire substrate with SiO2 mask for GaN. |
Recipe: ''Std GaN Etch - BCl3/Cl2/Ar - 200C (Public)'', on 1cm x 1cm ''~1.2µm deep GaN etch with Cl2/BCl3/Ar at 200°C.'' Sapphire substrate with SiO2 mask for GaN. |
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* [https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=0#gid=0 GaN Etching with Cl2/BCl3/Ar at 200°C - Etch Data] |
* [https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=0#gid=0 GaN Etching with Cl2/BCl3/Ar at 200°C - Etch Data] |
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== [[DSEIII (PlasmaTherm/Deep Silicon Etcher)|PlasmaTherm DSEIII Deep Silicon Etcher]] == |
== [[DSEIII (PlasmaTherm/Deep Silicon Etcher)|PlasmaTherm DSEIII Deep Silicon Etcher]] == |
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=== Si Bosch Etching C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/Ar === |
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*Recipe: ''STD_Bosch_Si (⭐️Production),'' on 100mm Si Wafer with ~50% open area, photoresist mask, ~40µm deep |
*Recipe: ''STD_Bosch_Si (⭐️Production),'' on 100mm Si Wafer with ~50% open area, photoresist mask, ~40µm deep |
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Latest revision as of 18:35, 28 February 2025
Process Control Data are standardized processes, run by the NanoFab, allowing for day-to-day or year-by-year comparisons of a tool's performance at the process level. This is similar Statistical Process Control (SPC).
These are the same links are found on individual tool pages, in the <<tool page>> > Process Control section.
Data are collected by our Process Group Interns and reviewed by Process Group Staff.
Deposition, Dielectric (Process Control Data)
Process Control data for various deposition tools in the lab.
PECVD #1 (PlasmaTherm 790)
PECVD #2 (Advanced Vacuum)
ICP-PECVD (Unaxis VLR Dep)
- ICP-PECVD: Plots of SiO2 Films
- ICP-PECVD: Plots of Si3N4 Films
- ICP-PECVD: SiO2 Low-Dep Rate (LDR)
- ICP-PECVD: SiO2 High-Dep Rate (HDR)
- ICP-PECVD: Si3N4
- ICP-PECVD: Si3N4 Low-Stress
Ion Beam Sputter Deposition (Veeco Nexus)
Old Data (Pre 2022)
Old data in a different format can be found below:
Deposition, Metal (Process Control Data)
Process Control data for various Metal evaporators in the lab.
E-Beam 4 (CHA)
- E-Beam 4 Ti: Titanium Datasheet & Titanium Plots
- E-Beam 4 Au: Gold Datasheet & Gold Plots
- E-Beam 4 Cr: Chromium Datasheet & Chromium Plots
- E-Beam 4 Ni: Nickel Datasheet & Nickel Plots
E-Beam 1 (Sharon)
Coming Soon...
Etching (Process Control Data)
Process Control data for various dry etching tools in the lab.
PlasmaTherm SLR Fluorine Etcher
SiO2 Etching (FL-ICP Process Control)
We have found that SiO2 etching is fairly insensitive to chamber condition.
Old SiO2 Process Control Data
- SiO2 Etching with CHF3/CF4 (FL-ICP) - No data prior to 2023-01-20
Si Etching (FL-ICP Process Control)
This Si etch is much more sensitive to chamber condition, allowing us to detect chamber contamination faster.
- Recipe: SiVertHFv2 - C4F8/SF6/CF4 etch of 100mm Silicon Wafer with ~50% open area and resist mask
Panasonic ICP #1
Old Process Control Data
- SiO2 Etch with CHF3/CF4 (Panasonic 1) - No data prior to 2023-01-20
Panasonic ICP#2
Old Process Control Data
- SiO2 Etching with CHF3/CF4 - ICP2 - No data prior to 2023-01-20
Unaxis VLR Etch
Oxford PlasmaPro Cobra Etcher
InP Ridge Etch: Cl2/CH4/H2/60°C
Calibration / Process testing data taken using the "InP Ridge Etch" process: Cl2/CH4/H2 @ 60°C, 1cm piece with ~50% SiO2 hardmask.
- "Std InP Ridge Etch" Cl2/CH4/H2/60°C - Etch Data Tables
- "Std InP Ridge Etch" Cl2/CH4/H2/60°C - Plots
Old InP Ridge Etch Data
- InP Ridge Etch with Cl2/CH4/H2 @ 60°C - No data prior to 2023-01-20
GaN Etch (Cl2/BCl3/Ar/200°C)
Recipe: Std GaN Etch - BCl3/Cl2/Ar - 200C (Public), on 1cm x 1cm ~1.2µm deep GaN etch with Cl2/BCl3/Ar at 200°C. Sapphire substrate with SiO2 mask for GaN.
PlasmaTherm DSEIII Deep Silicon Etcher
Si Bosch Etching C4F8/SF6/Ar
- Recipe: STD_Bosch_Si (⭐️Production), on 100mm Si Wafer with ~50% open area, photoresist mask, ~40µm deep
Lithography (Process Control Data)
Process Control Data for Nanofab Lithography/patterning tools.
Stepper #3 (ASML DUV)
- The Process Group regularly measures data on lithography Critical Dimension ("CD") and Wafer-stage Particulate Contamination for this tool, using a sensitive lithography process that will reveal small changes in Dose repeatability and wafer flatness.
- Plots of CD Repeatability
- Data for CD Uniformity and Particulate Contamination
Example of Data Table with SEM's of 320nm features. Click for full data table.
Example SPC Chart - Measured Critical Dimension "CD" versus Date. Click for charts.
