Maskless Aligner (Raith PicoMaster XF): Difference between revisions

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|location = Bay 6
|location = Bay 6
|description = Direct-Write (Maskless) I-Line Photolithography
|description = Direct-Write (Maskless) I-Line Photolithography
|manufacturer = ?
|manufacturer = Raith Gmbh
|model = ?
|model = Picomaster XF 200
|toolid=?
|toolid=104
|materials = I-Line Photoresists
|materials = I-Line Photoresists
}}
}}
{{ToolActions|
{{ToolActions|
|toolid = ?
|toolid = 104
|InstructionsURL =
|InstructionsURL =
|ProcessControlURL =
|ProcessControlURL =
|TrainingURL = ?
|TrainingURL =
}}
}}
{{WIP}}
{{WIP}}


==About==
==About==
The MLA150 allows for arbitrary direct-write patterning of I-Line photoresists from an uploaded CAD drawing/file (GDS, DXF, CIF etc.). The system uses a [https://en.wikipedia.org/wiki/Digital_micromirror_device digital micromirror device] ("DMD", an array of MEMS mirrors) for patterning the exposure light-field, to programmatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required.
The Raith PicoMaster XF 200 allows for arbitrary direct-write patterning of I-Line photoresists from an uploaded CAD drawing/file (GDS, DXF, CIF etc.). The system uses a [https://www.siliconlight.com/glv/ Grating Light Valve] ("GLV") for patterning the exposure light-field, to programmatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required.


Depending on the exposure options and write area, the MLA is able to expose a 100mm wafer in about 30min, and achieves minimum features sizes around 0.5µm, with overlay/alignment accuracy better than 200nm.
Depending on the exposure options and write area, the PicoMaster is able to expose a 100mm wafer in about 60min, and achieves minimum features sizes around 0.5µm, with overlay/alignment accuracy better than 200nm.


The system has a continuous, automatic autofocus, using optical and pneumatic detection of the substrate surface.

The software allows for custom drawings and alignment marks to be exposed onto any feature located on the microscope.

Greyscale lithography allows for photoresist profiles with repeatable slanted or tapered structures, via an 8-bit greyscale bitmap or layer-structured DXF file. See the [[MLA150 - Troubleshooting#Greyscale Lithography Limitations|Greyscale Limitations page]] for more info.

The high-aspect ratio (variable/long focal length) option enables vertical sidewalls on very thick (~100µm) photoresists.

[[File:MLA150 Spatial Light Modulator Description.png|alt=Schematic of spatial light modulator exposure technique.|none|thumb|550x600px|Exposure method using a spatial light modulator, continuously moving stage and continuous autofocus. See [https://heidelberg-instruments.com/key-features/maskless-laser-lithography/ HIMT] for more info.]]


==Detailed Specifications==
==Detailed Specifications==
{{WIP}}
{{WIP}}
*Maximum Writeable Area: 150 x 150mm
*Maximum Writeable Area: TBD
*Substrate size: 9-inch square or 200mm round down to 5-mm pieces
*Substrate size: 200mm round down to 1cm pieces
⚫
*Wafer / substrate thickness: Max. / Min. TBD
**''Contact staff for pieces < 5 mm.''
⚫
*Wafer / substrate thickness: Max. 9mm / Min. 0.1mm
*Exposure optics:
*Exposure optics:
**[https://en.wikipedia.org/wiki/Digital_micromirror_device Digital micromirror device (DMD)]
**[https://en.wikipedia.org/wiki/Digital_micromirror_device Digital micromirror device (DMD)]
**Laser #1: 375nm
**Laser: 405nm
**Laser #2: 405nm
**Lens NA = TBD
**Lens NA = 0.95
*Alignment Accuracy: Global ≤ 500nm; Local ("Field") ≤ 250nm
*Alignment Accuracy: Global ≤ 500nm; Local ("Field") ≤ 250nm
*Linewidth variation: ≤100nm (relevant to stitched exposure fields)
*Linewidth variation: ≤100nm (relevant to stitched exposure fields)
*Minimum Features: ~0.40µm line/space demonstrated with 0.5µm-thick PR. Requires additional effort. ≥1µm is relatively straightforward.
*Minimum Features: ~0.40µm line/space demonstrated with 0.5µm-thick PR. Requires additional effort. ≥1µm is relatively straightforward.
*Write Grid (Address Unit):
*Write Grid (Address Unit): TBD
**High Quality Mode (std.): 40nm
**Fast Mode: 100nm


*Additional manufacturer options:
*Additional manufacturer options:
⚫
**Backside alignment
**High-resolution option (Write Mode 1)
**Extended Focus Range
**Variable Focal Depth
**Optical (laser) Autofocus in addition to std. Pneumatic Autofocus
**Greyscale Mode
⚫
**(No backside alignment)


==Operating Procedures==
==Operating Procedures==
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===Standard Operating Procedures===
===Standard Operating Procedures===


*[https://wiki.nanofab.ucsb.edu/w/images/7/7b/MLA150_SOP_Rev_N_%28LS%29.pdf MLA150 - Standard Operating Procedure] - updated Nov 15th 2024
*[https://wiki.nanofab.ucsb.edu/w/images/c/ca/Picomaster_XF_200_SOP_Rev_A.pdf PicoMaster XF 200- Standard Operating Procedure] - updated Sept 26th 2026
**''Includes File-upload procedure, CAD Conversion, Exposure and Alignment.''
**''Includes File-upload procedure, CAD Conversion, Exposure and Alignment.''
**User manuals ''are available at the tool and on the tool's computer.''
**User manuals ''are available at the tool and on the tool's computer.''
*[https://wiki.nanofab.ucsb.edu/w/images/9/95/MLA150_Quick_Start_Rev_B.pdf MLA150 Quick Start Guide **Experienced Users Only**]
*[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Templates] have been updated, reflecting allowed sample sizes for each focus mode.


=== Video Training ===
*[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=5813cf18-37cb-48f1-aee6-acd50055c65e '''Video Training for MLA150''']
**''Bookmarks in the video can point you to specific solutions/procedures.''
**'''UPDATES to the Video Training''': ''please review the addendums below:''
***New software has been installed, the '''[https://wiki.nanotech.ucsb.edu/w/images/e/ec/MLA150_SOP_Rev_L_%28LS%29.docx.pdf SOP]''' shows the newer menu options.
***CRITICAL: There are now TWO locations on which you must choose "Optical Autofocus". Failure to do so can result in <u>system damage</u>.
***[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Templates] have been updated, which are currently not reflected in the video.
***Numerous solved issues have been added to the [[MLA150 - Troubleshooting|'''Troubleshooting page''']].

=== Special Procedures ===

*[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|Calibrating your Process with a Focus-Exposure Matrix (FEM)]] - called ''"Series"'' mode on the MLA
*[[MLA150 - Large Image GDS Generation|Large Image Patterning]] - one way to generate a GDS file out of an arbitrary image (eg. JPG, BMP, PNG etc.)

===[[MLA150 - Troubleshooting|<u>Troubleshooting & Known Bugs</u>]]===

*''See the above page for troubleshooting/recovery info and workarounds to known bugs.''
*Double-side polished transparent substrates can sometimes produce difficulties, due to the exposure light reflecting from the wafer underside. Many users have found ways to make them work properly - contact [[Demis D. John|staff]] if you need help with this.


===Training Procedure===
===Training Procedure===
To get authorized on this tool:
To get authorized on this tool: {{ToolTrainingButton|toolid=32}}

#please study the training videos here: '''[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=5813cf18-37cb-48f1-aee6-acd50055c65e Heidelberg MLA150 Training Video]'''
#"shadow" experienced users in your group, if you have any, and
#when you are ready, click this button to request training:{{ToolTrainingButton|toolid=32}}


==Design Info - CAD layout==
==Design Info - CAD layout==


{{WIP}}
*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''Important info for designing your CAD files, alignment marks etc.''
*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''Important info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - ''example CAD designs and useful CAD structures.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - ''example CAD designs and useful CAD structures.''
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==Recipes==
==Recipes==
{{WIP}}
{{WIP}}
*'''Recipes > Lithography >''' '''<u>[[Maskless Aligner Recipes#Maskless Aligner .28Heidelberg MLA150.29|Maskless Aligner MLA150]]</u>'''
*'''Recipes > Lithography >''' '''<u>[[Direct-Write_Lithography_Recipes#Maskless_Aligner_(Raith_PicoMasterXF)]]</u>'''
**''Starting recipes for various I-Line photoresists''
**''Starting recipes for various I-Line photoresists''


Latest revision as of 20:07, 30 September 2026

Maskless Aligner (Raith PicoMaster XF)
File:XYZ.jpg
Location Bay 6
Tool Type Lithography
Manufacturer Raith Gmbh
Model Picomaster XF 200
Description Direct-Write (Maskless) I-Line Photolithography
Primary Supervisor Biljana Stamenic
(805) 893-4002
biljana@ece.ucsb.edu

Secondary Supervisor

Lee Sawyer

Materials I-Line Photoresists
Recipes
SignupMonkey: Sign up for this tool


Instructions + Procedures
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Maintenance
Messages
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Work In Progress

This article is still under construction. It may contain factual errors. Content is subject to change.


About

The Raith PicoMaster XF 200 allows for arbitrary direct-write patterning of I-Line photoresists from an uploaded CAD drawing/file (GDS, DXF, CIF etc.). The system uses a Grating Light Valve ("GLV") for patterning the exposure light-field, to programmatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required.

Depending on the exposure options and write area, the PicoMaster is able to expose a 100mm wafer in about 60min, and achieves minimum features sizes around 0.5µm, with overlay/alignment accuracy better than 200nm.


Detailed Specifications


Work In Progress

This article is still under construction. It may contain factual errors. Content is subject to change.


  • Maximum Writeable Area: TBD
  • Substrate size: 200mm round down to 1cm pieces
  • Wafer / substrate thickness: Max. / Min. TBD
  • Exposure optics:
  • Alignment Accuracy: Global ≤ 500nm; Local ("Field") ≤ 250nm
  • Linewidth variation: ≤100nm (relevant to stitched exposure fields)
  • Minimum Features: ~0.40µm line/space demonstrated with 0.5µm-thick PR. Requires additional effort. ≥1µm is relatively straightforward.
  • Write Grid (Address Unit): TBD
  • Additional manufacturer options:
    • Backside alignment

Operating Procedures


Work In Progress

This article is still under construction. It may contain factual errors. Content is subject to change.


Standard Operating Procedures


Training Procedure

To get authorized on this tool:

Request Training


Design Info - CAD layout


Work In Progress

This article is still under construction. It may contain factual errors. Content is subject to change.


Recipes


Work In Progress

This article is still under construction. It may contain factual errors. Content is subject to change.


Calibrate your own Litho process

Litho. recipes for all our photolith. tools can be found on the Photolithography Recipes page.

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