Vapor HF Etch: Difference between revisions
Jump to navigation
Jump to search
No edit summary |
|||
| (27 intermediate revisions by 4 users not shown) | |||
| Line 1: | Line 1: | ||
{{ |
{{tool2|{{PAGENAME}} |
||
|picture=IMG_2416_1.jpg |
|picture=IMG_2416_1.jpg |
||
|type = Dry Etch |
|type = Dry Etch |
||
|super= |
|super= Bill Millerski |
||
|super2= Mike Silva |
|||
|phone=(805)839-3918x219 |
|phone=(805)839-3918x219 |
||
|location=Bay 2 |
|location=Bay 2 |
||
| Line 12: | Line 13: | ||
}} |
}} |
||
= About = |
= About = |
||
The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial SiO<sub>2</sub> layer below) with the use of Al<sub>2</sub>O<sub>3</sub>, Al or some other metal as an etch mask at 45<sup>o</sup>C. The tool uses vapor HF (VHF), EtOH (Ethanol vapor is an Alcohol-based one, ionizing the HF and activating etching, influencing within wafer etch uniformity, and being most compatible with VHF), and N<sub>2</sub> gases and can process small sample(s) (on a 8<sup>"</sup> Si carrier wafer) up to an 8<sup>"</sup> wafer. There are 5 standard etch recipes installed in the tool with the SiO<sub>2</sub> etch |
The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial SiO<sub>2</sub> layer below) with the use of Al<sub>2</sub>O<sub>3</sub>, Al or some other metal as an etch mask at 45<sup>o</sup>C. The tool uses vapor HF (VHF), EtOH (Ethanol vapor is an Alcohol-based one, ionizing the HF and activating etching, influencing within wafer etch uniformity, and being most compatible with VHF), and N<sub>2</sub> gases and can process small sample(s) (on a 8<sup>"</sup> Si carrier wafer) up to an 8<sup>"</sup> wafer. There are 5 standard etch recipes installed in the tool with the SiO<sub>2</sub> undercut-etch-rate from low to high. The SiO<sub>2</sub> undercut-etch-rate is from ~10nm/min to ~350nm/min. |
||
=Documentation= |
=Documentation= |
||
*[[media:SPTS- |
*[[media:SPTS-Primaxx uEtch Presentation-a.pdf|System Manual Part A]] |
||
*[[media:SPTS- |
*[[media:SPTS-Primaxx uEtch Presentation-b.pdf|System Manual Part B]] |
||
*[[media:25-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-a.pdf|Si Etching Profile & Results]] |
|||
=Recipes= |
|||
*[[media:26-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-2.pdf|Si Etching Profile & Results]] |
|||
* See the [https://wiki.nanotech.ucsb.edu/w/index.php?title=Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29 Vapor HF Recipes] page for recipe specific to this tool. |
|||
* See the general [[Dry Etching Recipes]] page for a table of all etch recipes across all tools. |
|||
Latest revision as of 17:53, 30 August 2022
| ||||||||||||||||||||||||||||||
About
The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial SiO2 layer below) with the use of Al2O3, Al or some other metal as an etch mask at 45oC. The tool uses vapor HF (VHF), EtOH (Ethanol vapor is an Alcohol-based one, ionizing the HF and activating etching, influencing within wafer etch uniformity, and being most compatible with VHF), and N2 gases and can process small sample(s) (on a 8" Si carrier wafer) up to an 8" wafer. There are 5 standard etch recipes installed in the tool with the SiO2 undercut-etch-rate from low to high. The SiO2 undercut-etch-rate is from ~10nm/min to ~350nm/min.
Documentation
Recipes
- See the Vapor HF Recipes page for recipe specific to this tool.
- See the general Dry Etching Recipes page for a table of all etch recipes across all tools.