PECVD Recipes: Difference between revisions
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*[[Media:PECVD2-SiN-Recipe-NoAr-5W-250C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 250° High Stress)]] |
*[[Media:PECVD2-SiN-Recipe-NoAr-5W-250C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 250° High Stress)]] |
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*[[Media:|Film Properties of High-stress SiN<sub>x</sub> (No Ar, 5W, 250°)]] |
*[[Media:34-High-stress_SiNx_at_250_C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of High-stress SiN<sub>x</sub> (No Ar, 5W, 250°)]] |
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*[[Media:PECVD2-SiN-Recipe-NoAr-50W-250C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 250° Medium Stress)]] |
*[[Media:PECVD2-SiN-Recipe-NoAr-50W-250C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 250° Medium Stress)]] |
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*[[Media:PECVD2-SiN-Recipe-NoAr-120W-250C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 250° Low Stress)]] |
*[[Media:PECVD2-SiN-Recipe-NoAr-120W-250C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 250° Low Stress)]] |
Revision as of 22:59, 29 June 2015
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data 2014
- SiN Data 2015
- SiN 1000A Thickness uniformity 2014
- SiN 1000A Thickness uniformity 2015
SiO2 deposition (PECVD #1)
- SiO2 Standard Recipe
- SiO2 Data 2014
- SiO2 Data 2015
- SiO2 1000A Thickness uniformity 2014
- SiO2 1000A Thickness uniformity 2015
SiOxNy deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiO2 deposition (PECVD #2)
- Oxide Standard Recipe
- Oxide Data 2014
- Oxide Data 2015
- Oxide Thickness Uniformity 2014
- Oxide Thickness Uniformity 2015
SiN deposition (PECVD #2)
- Nitride2 Standard Recipe
- Nitride2 Data 2014
- Nitride2 Data 2015
- Nitride2 Thickness Uniformity 2014
- Nitride2 Thickness Uniformity 2015
LS SiN deposition (PECVD #2)
- LS Nitride2 Standard Recipe
- LS Nitride2 Data 2014
- LS Nitride2 data 2015
- LS Nitride2 Thickness Uniformity 2014
- LS Nitride2 Thickness Uniformity 2015
Amorphous-Si deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
50° | 100° | 250° |
---|---|---|
SiN (2% SiH4 - No-Ar - Extra N2)
50° | 100° | 250° |
---|---|---|
SiN (100% SiH4 )
50° | 100° | 250° |
---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
---|---|---|
SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
---|---|---|
Amorphous Si (100%SiH4 Ar He)
90° | 250° |
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