Rapid Thermal Processor (AET RX6): Difference between revisions
m (→Detailed Specifications: "Temp" --> "maximum temp") |
|||
| Line 11: | Line 11: | ||
|toolid=42 |
|toolid=42 |
||
}} |
}} |
||
= |
=About= |
||
Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls. |
Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls. |
||
= |
=Detailed Specifications= |
||
*Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 3 min. |
*Max. Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 3 min. |
||
*Maximum ramp rate of |
*Maximum ramp rate of 50°C/Sec. |
||
*Oxygen, Nitrogen and Forming Gas flows up to 10LPM. |
*Oxygen, Nitrogen and Forming Gas flows up to 10LPM. |
||
*TC use for anneals up to 1200°C |
*TC use for anneals up to 1200°C |
||
| Line 24: | Line 24: | ||
=Max temp/Time= |
=Max temp/Time= |
||
{| |
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" |
||
|- |
|- |
||
|width="100"|Temperature||width="75"|Time |
| width="100" |Temperature|| width="75" |Time |
||
|- |
|- |
||
|1000°C |
|1000°C||1 Hour |
||
|- |
|- |
||
|1100°C||10 min |
|1100°C||10 min |
||
|- |
|- |
||
|1200°C |
|1200°C||3 min |
||
|- |
|- |
||
|1300°C|| |
|1300°C||10 sec |
||
|- |
|- |
||
|} |
|} |
||
=Documentation= |
=Documentation= |
||
*[[media:AET RTA Operating Instructions.pdf|Operating Instuctions]] |
|||
*[//www.nanotech.ucsb.edu/wiki/images/b/bb/AET_RTA_Operating_Instructions.pdf Operating Instuctions] |
|||
Revision as of 21:48, 25 October 2019
| |||||||||||||||||||||
About
Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO2, Si3N4, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.
Detailed Specifications
- Max. Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 3 min.
- Maximum ramp rate of 50°C/Sec.
- Oxygen, Nitrogen and Forming Gas flows up to 10LPM.
- TC use for anneals up to 1200°C
- Windows-based process monitoring and control software by Sedona Visual Controls
Max temp/Time
| Temperature | Time |
| 1000°C | 1 Hour |
| 1100°C | 10 min |
| 1200°C | 3 min |
| 1300°C | 10 sec |