ICP Etch 1 (Panasonic E646V)

ICP Etch 1 (Panasonic E646V) Tool Type Dry Etch Location Bay 2 Supervisor Don Freeborn Supervisor Phone (805) 893-7975 Supervisor E-Mail dfreeborn@ece.ucsb.edu Description ? Manufacturer Panasonic Factory Solutions, Japan Dry Etch Recipes Sign up for this tool

About

This is a three-chamber tool for etching of a variety of materials.

Chamber one "Etch Chamber" is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching.

This chamber has the following gas sources: Cl₂, BCl₃, N₂, and O₂ (CHF₃ or Ar), (CF₄ or SF₆), where two of the lines must be manually switched between the two options shown (gasses can't be used simultaneously).

The system can be used to etch a variety of materials from SiO₂ to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, and is load-locked for fast pump down.

Chamber two, "Ashing Chamber" is a 2000 W ICP chamber configures for plasma "ashing" of photoresist and other materials such as BCB. The substrate is not biased for isotropic etching, and the chamber has CF₄ and O₂ for the gases. This is especially well-suited for omni-directional etching of photoresist/PR removal, or BCB etch-back.

Chamber three "Rinse Chamber" is a DI rinsing chamber for rinsing off any etch byproducts before removing the sample from the system.

The system accepts 6” wafers with SEMI-std. flats. Users often mount smaller pieces to the wafers, usually with easily removable oil to improve uniform heatsinking. In Automatic mode, multiple wafers can be run through automatically with the cassette-based system.

Detailed Specifications

• 1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
• Multiple 6” diameter wafer capable system
• Pieces possible by mounting to 6” wafer

Etch Chamber:

• Optimal Emission Monitoring
• Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
• Cl₂, BCl₃, N₂, O_2, (CHF₃ or Ar), (CF₄ or SF₆) in etch chamber
• Room Temp - 80°C sample temperature for etching. Default 12°C Chuck Temperature.

Ashing Chamber:

• 2000 W ICP ashing chamber
• RT - 250°C sample temperature for ashing
• Ashing pressures 50 mT - 500 mT
• O₂, N₂, CF₄, H₂O Vapor for ashing chamber
• Room Temp. to 270°C etching. Default 50°C.

Documentation

• Gas Change Procedure (CHF3 & AR)
• Gas Change Procedure (CF4 & SF6)
• Panasonic _1_instructions.pdf
• Gas Change Procedure (N2 & He)