ICP Etch 2 (Panasonic E626I)

ICP Etch 2 (Panasonic E626I) Tool Type Dry Etch Location Bay 2 Supervisor Tony Bosch Supervisor Phone (805) 893-3486 Supervisor E-Mail bosch@ece.ucsb.edu Description ICP Etch Manufacturer Panasonic Factory Solutions Dry Etch Recipes Sign up for this tool

About

This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl₂, BCl₃, CF₄, CHF₃, SF₆, Ar, N₂, and O₂ for gas sources and can be used to etch a variety of materials from SiO₂ to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down.

The system is also equipped with a red laser monitoring system from Intellemetrics for more precise etch stop control.

Detailed Specifications

• 1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
• Room Temp. – 80°C sample temperature for etching. Default 15°C Chuck temperature.
• Optimal Emission Monitoring
• Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
• Cl₂, BCl₃, (Ar or CHF₃), (CF₄ or SF₆), N₂, and O₂ in etch chamber
• O₂, N₂, CF₄, H₂O Vapor for ashing chamber
• Single 6” diameter wafer capable system
• Pieces possible by mounting to 6” wafer
• 670nm laser endpoint detector with camera and simulation software: Intellemetrics LEP 500

Documentation

• Operating Instruction Manual
• Training Notes
• Gas Change Instructions
• Manual Wafer Transfer Instructions
• Laser Etch Monitor procedures

Recipes

• Dry Etching Recipes
  • Table of all dry etching recipes, showing which tools can etch which materials etc.
• ICP2 Recipes
  • Starting point recipes for ICP2 specifically.