Atomic Layer Deposition Recipes

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Atomic Layer Deposition (Oxford FlexAL)

Oxford FlexAL Chamber #1: Metals

Maximum 30nm deposition thickness! (ask Tool Supervisor if needed.)

Note that Plasma-based (indicated by asterisk eg. N* or O*) recipes run nearly 2x faster than H2O/thermal recipes due to faster reaction rate, thus shorter cycling.

Pt deposition (ALD CHAMBER 1)

• Recipe name: Ch1_TMCpPt+O3-300C
  • Pt deposition rate ~ 0.5-0.6 A/cyc
  • Conductivity data: (to be added)
  • recipe utilizes the ozone generator which must be first set to the following conditions:
    • O₂ flow = 250sccm
    • O₃ concentration = 15 wt%
  • 300°C deposition
• Recipe name: CH1-TMCpPt+250W/O*-300C
  • Uses Oxygen plasma
  • 300°C deposition

Ru deposition (ALD CHAMBER 1)

• Recipe name: Ch1_Ex03Ru[HPbub]+O2-300C
• Ru deposition rate ~ 0.6-0.7A/cyc.
• Conductivity data: (to be added)
• 300°C, O2 gas reaction

ZnO Deposition (ALD Chamber 1)

Conductive film.

• Recipe name: Ch1_DEZ+H2O-200C
• ZnO deposition rate ≈ 1.6 A/cycle
• resistivity ≈ TBA
• 200°C Deposition, Water reaction

ZnO:Al deposition (ALD CHAMBER 1)

Al-Doped ZnO for variable resisitivity.

• Recipe name: Ch1_DEZ/TMA+H2O-200C
  • The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.
• Al dose fraction = 5% for lowest resistivity
• ZnO deposition rate ~ 1.7A/cyc
• resistivity ~ 4200uOhm.cm (390A film)

Oxford FlexAL Chamber #3: Dielectrics

Maximum 30nm deposition thickness! (ask Tool Supervisor if needed.)

Al₂O₃ deposition (ALD CHAMBER 3)

• Recipe name: CH3-TMA+H2O-300C
  • Al₂O₃ deposition rate ~ 1A/cyc
  • 300°C Dep., Water reaction
  • This is considered the standard recipe for ALD
  • Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
• Recipe Name: CH3-TMA+250W/O*-300C
  • Similar deposition rate
  • Oxygen Plasma reaction instead of H2O
  • Lower carbon content, faster depsition.
  • Temperature variations: 300°C (std.), 200°C, 120°C
• Recipe Name: CH3-TMA+O3/200mT-300C
  • Similar dep. rate
  • Ozone (O₃) reactant, experimental

AlN deposition (ALD CHAMBER 3)

• Recipe name: CH3-TMA+100W/N*-300C
  • AlN deposition rate ~ t.b.d.
  • Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
  • Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
  • Power variations: 300W, 400W (at 300°C)
  • Nitrogen/Hydrogen variations: "30N*/30H*" at 200*C and 300°C

HfO₂ deposition (ALD CHAMBER 3)

• Recipe name: CH3-TEMAH+H2O-300C
  • HfO₂ deposition rate ~ 0.9-1.0A/cyc
  • Note: deposition shows significant parasitic growth (via CVD channel) if H₂O purge/pump times are not sufficient.
  • Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
• Recipe name: CH3-TEMAH+250W/O*-300C
  • Uses Oxygen plasma reactant instead of H₂O
• Recipe name: CH3-TEMAH+O3/100mT-300C
  • Uses Ozone (O₃) for reactant instead of H₂O

SiO₂ deposition (ALD CHAMBER 3)

• Recipe name: CH3-TDMAS+250W/O*-300C
  • SiO₂ deposition rate ~ 0.7-0.8A/cyc
  • Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
  • Temperature variations: 300*C (std.), 250°C, 230°C, 200°C, 150°C, 120°C
• Recipe name: CH3-TDMAS+O3/200mT-300C
  • Uses Ozone (O₃) for reactant instead of H₂O

ZrO₂ deposition (ALD CHAMBER 3)

• Recipe name: CH3-TEMAZ+H2O-300C
  • ZrO₂ deposition rate ~ 0.9-1.0A/cyc
  • Not directly characterized since results are basically the same as the HfO₂ process above.
  • Temperature variations: 300°C (std.), 200°C
• Recipe name: CH3-TEMAZ+250W/O*-300C
  • Uses Oxygen plasma reactant instead of H₂O
• Recipe name: CH3-TEMAZ+O3/100mT-300C
  • Uses Ozone (O₃) for reactant instead of H₂O

TiO₂ deposition (ALD CHAMBER 3)

• Recipe name: CH3-TDMAT+H2O-300C
  • TiO₂ deposition rate ~ 0.6A/cyc
  • Note: deposition shows parasitic growth (via CVD channel) if H₂O purge/pump times are not sufficient.
  • Temperature variations: 300°C (std.), 200°C, 120*C
• Recipe name: CH3-TDMAT+250W/O*-300C
  • Uses Oxygen plasma reactant instead of H₂O

TiN deposition (ALD CHAMBER 3)

• Recipe name: CH3-TDMAT+400W/12N*/4H*-300C
  • TiN deposition rate ~ 0.7A/cyc
  • Conductivity data: (to be added)
  • Uses Plasma of N2 & H2 gases.
  • Temperatures: 300°C (std.), 200°C
• Recipe name: CH3-TDMAT+100W/N*-300C
  • Uses Plasma of N2 only
  • Temperatures: 300°C (std.), 200°C
• Recipe name: CH3-TDMAT+100W/NH3*-300C
  • Uses Plasma of NH₃ only
  • Temperatures: 300°C (std.), 200°C