Maskless Aligner (Heidelberg MLA150): Difference between revisions
m (→Recipes: corrected link) |
(→About: updated some specs) |
||
| Line 11: | Line 11: | ||
}} |
}} |
||
==About== |
==About== |
||
The MLA150 allows for arbitrary direct patterning of I-Line photoresists, directly from a CAD drawing/file, |
The MLA150 allows for arbitrary direct patterning of I-Line photoresists, directly from a CAD drawing/file, with alignment to arbitrary features on the sample. The system uses a [https://en.wikipedia.org/wiki/Digital_micromirror_device digital micromirror device] ("DMD", an array of MEMS mirrors) for patterning the exposure light-field, to programmatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required. |
||
The system has a continuous, automatic autofocus, using either a pneumatic or optical detection. This enables lithography on non-planar or curved substrates. We also have the high-aspect ratio (variable/long focal length) option installed for very thick (~70µm) photoresists. |
|||
Depending on the exposure options and write area, MLA is able to expose a 100mm wafer in about 30min, and achieves minimum features sizes around 0.5µm, with overlay/alignment accuracy better than 200nm. |
|||
Lastly, the greyscale lithography is possible, producing repeatable, slanted or tapered structures in photoresist or photo-active dielectrics like SU-8. |
|||
==Detailed Specifications== |
==Detailed Specifications== |
||
| Line 18: | Line 24: | ||
*Wafer / substrate thickness: |
*Wafer / substrate thickness: |
||
*Exposure optics: |
*Exposure optics: |
||
**Laser #1: |
**Laser #1: 375nm |
||
**Laser #2: |
**Laser #2: 405nm |
||
* Focus modes: |
* Focus modes: |
||
* Alignment: |
* Alignment: |
||
| Line 26: | Line 32: | ||
** Repetability |
** Repetability |
||
*Additional manufacturer options |
*Additional manufacturer options: |
||
**Focus option? |
**Focus option? |
||
**Dual lasers? |
**Dual lasers? |
||
Revision as of 21:26, 28 September 2020
 Work In Progress This article is still under construction. It may contain factual errors. Content is subject to change. |
|
About
The MLA150 allows for arbitrary direct patterning of I-Line photoresists, directly from a CAD drawing/file, with alignment to arbitrary features on the sample. The system uses a digital micromirror device ("DMD", an array of MEMS mirrors) for patterning the exposure light-field, to programmatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required.
The system has a continuous, automatic autofocus, using either a pneumatic or optical detection. This enables lithography on non-planar or curved substrates. We also have the high-aspect ratio (variable/long focal length) option installed for very thick (~70µm) photoresists.
Depending on the exposure options and write area, MLA is able to expose a 100mm wafer in about 30min, and achieves minimum features sizes around 0.5µm, with overlay/alignment accuracy better than 200nm.
Lastly, the greyscale lithography is possible, producing repeatable, slanted or tapered structures in photoresist or photo-active dielectrics like SU-8.
Detailed Specifications
- Wafer size:
- Wafer / substrate thickness:
- Exposure optics:
- Laser #1: 375nm
- Laser #2: 405nm
- Focus modes:
- Alignment:
- Modes?
- Accuracy:
- Repetability
- Additional manufacturer options:
- Focus option?
- Dual lasers?
- High-resolution option?
- Uniformity:
- Write speeds:
Documentation
Design Tools/Info
Recipes
- Recipes > Lithography > Maskless Aligner MLA150
- Starting recipes for various I-Line photoresists