Difference between revisions of "Oxford ICP Etcher - Process Control Data"
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(in progress InP Ridge Etch) |
(→Data - InP Ridge Etch (Oxford ICP Etcher): updated SEM 1) |
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+ | | colspan="6" |'''InP Ridge Etch''': 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec) |
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|SEM Images |
|SEM Images |
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+ | |1/11/22 |
+ | |<small>DJ_Cal</small> |
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+ | |0.602 |
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+ | |64.6nm left |
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− | |Software timing bugs fixed - new etch rate |
+ | |Software timing bugs fixed - new etch rate will appear slightly higher. |
− | |[https://wiki.nanotech.ucsb.edu/w/images/ |
+ | |[https://wiki.nanotech.ucsb.edu/w/images/9/90/2022-01-11_Oxford_InP_Ridge_Wiki_Post_-_Cal01.pdf] |
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+ | |1/12/22 |
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− | |2022-01-11 |
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+ | |<small>DJ_Cal02</small> |
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+ | |0.563 |
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+ | |76.4nm left |
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|[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf] (wrong) |
|[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf] (wrong) |
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+ | |1/12/22 |
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− | |2022-01-21 |
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+ | |<small>DJ_Cal03</small> |
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+ | |0.612 |
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+ | |80.1nm left |
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|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf] (wrong) |
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf] (wrong) |
Revision as of 22:51, 13 January 2022
Data - InP Ridge Etch (Oxford ICP Etcher)
Work In Progress This article is still under construction. It may contain factual errors. Content is subject to change. |
InP Ridge Etch: 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec) | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (InP/SiO2) | Comments | SEM Images |
1/11/22 | DJ_Cal | 0.602 | 64.6nm left | Software timing bugs fixed - new etch rate will appear slightly higher. | [1] |
1/12/22 | DJ_Cal02 | 0.563 | 76.4nm left | [2] (wrong) | |
1/12/22 | DJ_Cal03 | 0.612 | 80.1nm left | [3] (wrong) |