Silicon Deep Etcher (Plasma-Therm SLR): Difference between revisions

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=Recipes=
=[[Si Deep RIE (PlasmaTherm/Bosch Etch)|Si Deep RIE (PlasmaTherm/Bosch Etch) - DECOMISSIONED]]=
'''This tool does not exist in this configuration any more, so these recipes are for Reference purposes Only!!!'''
'''This tool does not exist in this configuration any more, so these recipes are for Reference purposes Only!!!'''
The machine was upgraded to be the new Plasma-Therm Fluorine ICP Etcher - the chamber configuration is now different, making these recipes invalid.
The machine was upgraded to be the new Plasma-Therm Fluorine ICP Etcher - the chamber configuration is now different, making these recipes invalid.

Latest revision as of 23:04, 6 August 2024

Recipes

This tool does not exist in this configuration any more, so these recipes are for Reference purposes Only!!!
The machine was upgraded to be the new Plasma-Therm Fluorine ICP Etcher - the chamber configuration is now different, making these recipes invalid.
For Deep Silicon Etching, the Plasma-Therm DSE-iii is often used.  Some single-step Silicon etching is still performed on the SLR Fluorine ICP, due to the slower etch rate.

Bosch and Release Etch (Si Deep RIE)

  • Bosch and Release Processes
    • Ideal for deep (>>1µm), vertical etching of Silicon. Through-wafer etches are possible (requires carrier wafer).
    • Etch rate depends on area of exposed silicon being etched.
    • Al2O3 mask (ALD or Sputter) has >9000:1 selectivity
    • SiO2 (PECVD) mask has ~100:1 selectivity
    • Thermal SiO2 has ~300:1 selectivity.

Single-step Si Etching (not Bosch Process!) (Si Deep RIE)