Dry Etching Recipes: Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(Include "organics" for surface treatment)
(R levels for XeF2, Vapor HF and ion mills)
Line 44: Line 44:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Al
! bgcolor="#d0e7ff" align="center" |Al
Line 60: Line 60:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Au
! bgcolor="#d0e7ff" align="center" |Au
Line 76: Line 76:
|
|
|
|
|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}
|[[Other Dry Etching Recipes|R4]]
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Cr
! bgcolor="#d0e7ff" align="center" |Cr
Line 92: Line 92:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Cu
! bgcolor="#d0e7ff" align="center" |Cu
Line 108: Line 108:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Ge
! bgcolor="#d0e7ff" align="center" |Ge
Line 122: Line 122:
|
|
|
|
|[[Other Dry Etching Recipes|R2]]
|A
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Mo
! bgcolor="#d0e7ff" align="center" |Mo
Line 140: Line 140:
|
|
|
|
|A
|R1
|-
|-
!Nb
!Nb
Line 172: Line 172:
|
|
|
|
|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}
|[[Other Dry Etching Recipes|R4]]
|-
|-
!Os
!Os
Line 204: Line 204:
|
|
|
|
|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}
|[[Other Dry Etching Recipes|R4]]
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Ru
! bgcolor="#d0e7ff" align="center" |Ru
Line 220: Line 220:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Si
! bgcolor="#d0e7ff" align="center" |Si
Line 234: Line 234:
|
|
|
|
|{{rl|Other Dry Etching Recipes|Other Dry Etch (XeF2 Etcher)}}
|[[Other Dry Etching Recipes|R4]]
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Ta
! bgcolor="#d0e7ff" align="center" |Ta
Line 252: Line 252:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Ti
! bgcolor="#d0e7ff" align="center" |Ti
Line 268: Line 268:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub>
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub>
Line 284: Line 284:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3 (Sapphire)</sub>
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3 (Sapphire)</sub>
Line 300: Line 300:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |AlGaAs
! bgcolor="#d0e7ff" align="center" |AlGaAs
Line 316: Line 316:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |AlGaN
! bgcolor="#d0e7ff" align="center" |AlGaN
Line 332: Line 332:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |AlN
! bgcolor="#d0e7ff" align="center" |AlN
Line 348: Line 348:
|
|
|
|
|A
|R1
|-
|-
!BCB
!BCB
Line 380: Line 380:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |GaAs
! bgcolor="#d0e7ff" align="center" |GaAs
Line 396: Line 396:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |GaN
! bgcolor="#d0e7ff" align="center" |GaN
Line 412: Line 412:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |GaSb
! bgcolor="#d0e7ff" align="center" |GaSb
Line 428: Line 428:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |HfO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |HfO<sub>2</sub>
Line 444: Line 444:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |InGaAlAs
! bgcolor="#d0e7ff" align="center" |InGaAlAs
Line 460: Line 460:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |InGaAsP
! bgcolor="#d0e7ff" align="center" |InGaAsP
Line 476: Line 476:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |InP
! bgcolor="#d0e7ff" align="center" |InP
Line 492: Line 492:
|
|
|
|
|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}
|[[Other Dry Etching Recipes|R4]]
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |ITO
! bgcolor="#d0e7ff" align="center" |ITO
Line 508: Line 508:
|
|
|
|
|A
|R1
|-
|-
!LiNbO3
!LiNbO3
Line 524: Line 524:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
!Photoresist
!Photoresist
Line 541: Line 541:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |SiC
! bgcolor="#d0e7ff" align="center" |SiC
Line 557: Line 557:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |SiN
! bgcolor="#d0e7ff" align="center" |SiN
Line 573: Line 573:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |SiO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |SiO<sub>2</sub>
Line 588: Line 588:
|
|
|
|
|{{rl|Other Dry Etching Recipes|Other Dry Etch (Vapor HF Etcher)}}
|[[Other Dry Etching Recipes|R4]]
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |SiOxNy
! bgcolor="#d0e7ff" align="center" |SiOxNy
Line 605: Line 605:
|
|
|
|
|A
|R1
|-
|-
!SU8
!SU8
Line 637: Line 637:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |TiN
! bgcolor="#d0e7ff" align="center" |TiN
Line 653: Line 653:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |TiO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |TiO<sub>2</sub>
Line 669: Line 669:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |W-TiW
! bgcolor="#d0e7ff" align="center" |W-TiW
Line 685: Line 685:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |ZnO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |ZnO<sub>2</sub>
Line 701: Line 701:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |ZnS
! bgcolor="#d0e7ff" align="center" |ZnS
Line 717: Line 717:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |ZnSe
! bgcolor="#d0e7ff" align="center" |ZnSe
Line 733: Line 733:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |ZrO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |ZrO<sub>2</sub>
Line 749: Line 749:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |'''Material'''
! bgcolor="#d0e7ff" align="center" |'''Material'''

Revision as of 22:20, 9 August 2024

R3Process Control Data

See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches

Dry Etching Tools/Materials Table

The Key/Legend for this table's A...R6 values is at the bottom of the page.

Dry Etching Recipes
RIE Etching ICP Etching Oxygen Plasma Systems Other Dry Etchers
Material RIE 2
(MRC)
RIE 5
(PlasmaTherm)
DSEIII
(PlasmaTherm)
Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E646V)
ICP Etch 2
(Panasonic E626I)
Oxford ICP (PlasmaPro 100) Ashers
(Technics PEII)
Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810)
XeF2 Etch
(Xetch)
Vapor HF Etch
(uETCH)
CAIBE
(Oxford)
Ag R1
Al R2 R1 R2 R1
Au R4
Cr R2 R1 R1 R1
Cu R1
Ge A R1 R2 R1
Mo R1
Nb A R1
Ni R4
Os A R1
Pt R4
Ru A R3 R1
Si R4 R5 R1 R4 R1
Ta A R1 R1
Ti R1 R1 R1
Al2O3 A R3 R1
Al2O3 (Sapphire) R1 R1 R1
AlGaAs R3 R1 R3 R1
AlGaN R2 R1
AlN R1
BCB A
CdZnTe R3 R1
GaAs R4 R1 R3 R3 R1
GaN R4 R1 R1 R2 R1
GaSb A R1 R1 R1
HfO2 R1
InGaAlAs R4 R1 R1
InGaAsP R4 R3 R1
InP R4 A R1 R6 R4
ITO R4 R1
LiNbO3 R1
Photoresist

& ARC & Organics

R3 R3 R R3 R3 R3 R3 R3 R1
SiC R1 R1 R1
SiN R3 R1 R3 R3 R1
SiO2 R6 R1 R6 R4 R1
SiOxNy A R1 R1
SU8 A
Ta2O5 A R1 R1
TiN R1
TiO2 R1
W-TiW R2 R1 R1 R1
ZnO2 R1
ZnS R3 R1
ZnSe R2 R1
ZrO2 R1
Material RIE 2
(MRC)
RIE 5
(PlasmaTherm)
DSEIII
(PlasmaTherm)
Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E626I)
ICP Etch 2
(Panasonic E640)
Oxford ICP (PlasmaPro 100) Ashers
(Technics PEII)
Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810)
XeF2 Etch
(Xetch)
Vapor HF Etch
(uETCH)
CAIBE
(Oxford)

Process Ranking Table

Processes in the table above are ranked by their "Process Maturity Level" as follows:

Process Level Description of Process Level Ranking
A Process Allowed and materials available but never done
R1 Process has been run at least once
R2 Process has been run and/or procedure is documented or/and data available
R3 Process has been run, procedure is documented, and data is available
R4 Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available
R5 Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available
R6 Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available