Vacuum Deposition Recipes: Difference between revisions

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This table can be used to help located the needed recipe.
This table can be used to help located the needed recipe.

= Table =
= Table =


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! width="1675" height="45" colspan="18" | <div style="font-size: 150%;">Vacuum Deposition Recipes</div>
! width="1675" height="45" colspan="18" | <div style="font-size: 150%;">Vacuum Deposition Recipes</div>
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| [[Vacuum Deposition Recipes#SiN_deposition_.28PECVD_.231.29|Y]]
| [[Vacuum Deposition Recipes#SiN_deposition_.28PECVD_.231.29|Y]]
| [[Vacuum Deposition Recipes#SiN deposition (PECVD #2)|Y
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= E-Beam Evaporation =
= E-Beam Evaporation =


== Recipe 1 ==
== Recipe 1 ==


#Step 1 ....
#Step 1 ....
#Step 2...
#Step 2...


== Recipe 2 ==
== Recipe 2 ==


= Sputtering =
= Sputtering =


= Thermal Evaporation =
= Thermal Evaporation =


=Plasma Enhanced Chemical Vapor Deposition (PECVD) =
= Plasma Enhanced Chemical Vapor Deposition (PECVD) =


== SiN deposition (PECVD #1) ==
== SiN deposition (PECVD #1) ==
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== SiN deposition (PECVD #2) ==
== SiN deposition (PECVD #2) ==

#'''Standard clean'''
#'''Standard clean'''
##'''Pump down''': stabilization time t=15", step time(m)=0', step time(s)=30"
##'''Pump down''': stabilization time t=15", step time(m)=0', step time(s)=30"
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##'''High Pressure''': process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
##'''High Pressure''': process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
##'''Low pressure''': process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
##'''Low pressure''': process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
#'''Nitride 2'' (HF, n=2.0, 93nm/min)
#'''Nitride 2'' (HF, n=2.0, 93nm/min)
##process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17
##process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17


<br>


== SiO<sub>2</sub> deposition (PECVD #2) ==
== SiO<sub>2</sub> deposition (PECVD #2) ==
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##process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420
##process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420


= Atomic Layer Deposition (ALD) =
= Atomic Layer Deposition (ALD) =


= Ion-Beam Deposition (IBD) =
= Ion-Beam Deposition (IBD) =


= Molecular Vapor Deposition (MVD) =
= Molecular Vapor Deposition (MVD) =

Revision as of 20:31, 9 July 2012

This table can be used to help located the needed recipe.

Table

Vacuum Deposition Recipes

 E-Beam Evaporation Sputtering Thermal Evaporation Plasma Enhanced Chemical
Vapor Deposition (PECVD) 		Atomic Layer Deposition Ion-Beam Deposition (IBD) Molecular Vapor Deposition
Material E-Beam 1 (Sharon) E-Beam 2 (Custom) E-Beam 3 (Temescal) E-Beam 4 (CHA) Sputter 1 (Custom) Sputter 2
(SFI Endeavor) 		Sputter 3
(ATC 2000-F) 		Sputter 4
(ATC 2200-V) 		Sputter 5 (Lesker AXXIS) Thermal 1 Thermal 2 PECVD 1
(PlasmaTherm 790) 		PECVD 2
(Advanced Vacuum) 		Unaxis VLR ICP-PECVD
Ag Y
Al
















Al2O3
AlN
















Au
B
















Co
Cr
















Cu
Fe
















Ge
Hf
















HfO2
In
















Ir
ITO
Mo
Bn
Ni
Pd
Pt
Ru
Si
SiN Y [[Vacuum Deposition Recipes#SiN deposition (PECVD #2)|Y
SiO2 Y
SiOxNy
Sn
SrF2
Ta
Ta2O5
Ti
TiN
TiO2
V
W
Zn
ZnO2
Zr
ZrO2

E-Beam Evaporation

Recipe 1

  1. Step 1 ....
  2. Step 2...

Recipe 2

Sputtering

Thermal Evaporation

Plasma Enhanced Chemical Vapor Deposition (PECVD)

SiN deposition (PECVD #1)

  1. Clean (30CLN_SN)
    1. Initial t=10", p=2x10-2, T=250C
    2. N2 Purge t=30", p=300mT
    3. evacuate, base pressure=2x10-2, t=10"
    4. loop
    5. gas stabilization, t=30"
    6. etch chamber, t=30'
    7. evacuate, t=10"
    8. N2 purge
    9. evacuate
    10. loop
    11. SiN gas stabilization
    12. SiN deposition( 200A coat)
    13. evacuate
    14. N2purge, t=30"
    15. end
  2. SiN deposition (SiN_10) 130.8 A/min
    1. Initial t=10"
    2. N2 purge t=30"
    3. evacuate, t=10"
    4. loop
    5. SiN gas stabilization, t=30"
    6. SiN deposition t=8'11.2"
    7. evacuate, t=10"
    8. N2 purge t=30"
    9. evacuate t=10"
    10. loop

SiN deposition (PECVD #2)

  1. Standard clean
    1. Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
    2. Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
    3. High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
    4. Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
  2. 'Nitride 2 (HF, n=2.0, 93nm/min)
    1. process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17


SiO2 deposition (PECVD #2)

  1. Standard clean
    1. Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
    2. Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
    3. High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
    4. Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
  2. Oxide (HF, n=1.46, 25nm/min)
    1. process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420

Atomic Layer Deposition (ALD)

Ion-Beam Deposition (IBD)

Molecular Vapor Deposition (MVD)

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