Vacuum Deposition Recipes: Difference between revisions
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| bgcolor="EEFFFF" | [[Vacuum Deposition Recipes#SiO2 deposition (PECVD #1)|Y]] |
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| bgcolor="EEFFFF" | [[Vacuum Deposition Recipes# |
| bgcolor="EEFFFF" | [[Vacuum Deposition Recipes#SiO2 deposition (PECVD #2)|Y]] |
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Revision as of 22:21, 9 July 2012
This table can be used to help located the needed recipe.
Table (This heading is temporary)
Vacuum Deposition Recipes
| |||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
E-Beam Evaporation | Sputtering | Thermal Evaporation | Plasma Enhanced Chemical Vapor Deposition (PECVD) |
Atomic Layer Deposition | Ion-Beam Deposition (IBD) | Molecular Vapor Deposition | |||||||||||
Material | E-Beam 1 (Sharon) | E-Beam 2 (Custom) | E-Beam 3 (Temescal) | E-Beam 4 (CHA) | Sputter 1 (Custom) | Sputter 2 (SFI Endeavor) |
Sputter 3 (ATC 2000-F) |
Sputter 4 (ATC 2200-V) |
Sputter 5 (Lesker AXXIS) | Thermal 1 | Thermal 2 | PECVD 1 (PlasmaTherm 790) |
PECVD 2 (Advanced Vacuum) |
Unaxis VLR ICP-PECVD | |||
Ag | Y | ||||||||||||||||
Al | |||||||||||||||||
Al2O3 | |||||||||||||||||
AlN | |||||||||||||||||
Au | |||||||||||||||||
B | |||||||||||||||||
Co | |||||||||||||||||
Cr | |||||||||||||||||
Cu | |||||||||||||||||
Fe | |||||||||||||||||
Ge | |||||||||||||||||
Hf | |||||||||||||||||
HfO2 | |||||||||||||||||
In | |||||||||||||||||
Ir | |||||||||||||||||
ITO | |||||||||||||||||
Mo | |||||||||||||||||
Bn | |||||||||||||||||
Ni | |||||||||||||||||
Pd | |||||||||||||||||
Pt | |||||||||||||||||
Ru | |||||||||||||||||
Si | |||||||||||||||||
SiN | Y | Y | |||||||||||||||
SiO2 | Y | Y | |||||||||||||||
SiOxNy | |||||||||||||||||
Sn | |||||||||||||||||
SrF2 | |||||||||||||||||
Ta | |||||||||||||||||
Ta2O5 | |||||||||||||||||
Ti | |||||||||||||||||
TiN | |||||||||||||||||
TiO2 | |||||||||||||||||
V | |||||||||||||||||
W | |||||||||||||||||
Zn | |||||||||||||||||
ZnO2 | |||||||||||||||||
Zr | |||||||||||||||||
ZrO2 |
E-Beam Evaporation
Recipe 1
- Step 1 ....
- Step 2...
Recipe 2
Sputtering
Thermal Evaporation
Plasma Enhanced Chemical Vapor Deposition (PECVD)
SiN deposition (PECVD #1)
- Clean (30CLN_SN)
- Initial t=10", p=2x10-2, T=250C
- N2 Purge t=30", p=300mT
- evacuate, base pressure=2x10-2, t=10"
- loop
- gas stabilization, t=30"
- etch chamber, t=30'
- evacuate, t=10"
- N2 purge
- evacuate
- loop
- SiN gas stabilization
- SiN deposition( 200A coat)
- evacuate
- N2 purge, t=30"
- end
- SiN deposition (SiN_10) 130.8 A/min
- Initial t=10"
- N2 purge t=30"
- evacuate, t=10"
- loop
- SiN gas stabilization, t=30"
- SiN deposition t=8'11.2"
- evacuate, t=10"
- N2 purge t=30"
- evacuate t=10"
- loop
SiO2 deposition (PECVD #1)
- Clean (30CLN_SN)
- Initial t=10", p=2x10-2, T=250C
- N2 Purge t=30", p=300mT
- evacuate, base pressure=2x10-2, t=10"
- loop
- gas stabilization, t=30"
- etch chamber, t=30'
- evacuate, t=10"
- N2 purge
- evacuate
- loop
- SiO2 gas stabilization
- SiO2 deposition( 200A coat)
- evacuate
- N2 purge, t=30"
- end
- SiO2 deposition (SiO2_10) 440.5 A/min
- Initial t=10"
- N2 purge t=30"
- evacuate, t=10"
- loop
- SiO2 gas stabilization, t=30"
- SiO2 deposition t=8'11.2"
- evacuate, t=10"
- N2 purge t=30"
- evacuate t=10"
- loop
SiN deposition (PECVD #2)
- Standard clean
- Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
- Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
- High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Nitride 2 (HF, n=2.0, 93nm/min)
- process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17
SiO2 deposition (PECVD #2)
- Standard clean
- Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
- Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
- High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
- Oxide (HF, n=1.46, 25nm/min)
- process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420