Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer): Difference between revisions

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Line 30:
|79.4
|[https://www.nanotech.ucsb.edu/wiki/images/d/dc/SiO2_Etch_using_ICP2_with_O2-3-06-2019.pdf]
|-
|7/12/2019
|I21906
|91.9
|0.69
|78.1
|
|}

Revision as of 17:38, 25 July 2019

ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#01 95.2 0.74 77.9 [1]
1/28/2019 I21902 92.1 0.77 [2]
3/6/2019 I21903 88.5 0.80 79.4 [3]
7/12/2019 I21906 91.9 0.69 78.1
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