Wet Etching Recipes

References

Etch rates for Micromachining Processing (IEEE Jnl. MEMS, 1996) - includes tables of etch rates of numerous metals vs. various wet and dry etchants.

Etch rates for micromachining-Part II (IEEE Jnl. MEMS, 2003) - expanded tables containing resists, dielectrics, metals and semiconductors vs. many wet etch chemicals.

Guide to references on III±V semiconductor chemical etching - exhaustive list of wet etchants for etching various semiconductors, including selective etches.

Compound Semiconductor Etching

Guide to references on III±V semiconductor chemical etching

Please add any confirmed etches from this reference to the The Master Table of Wet Etching (Include All Materials).

Metal Etching

• Selective Wet Etch of Cr over Ta using Cr Etchant
• Wet Etch of ITO using Heated, Diluted HCl Solution

Silicon etching

Etch rates for micromachining processing

Etch rates for micromachining processing-part II

Please add any confirmed etches from this reference to the The Master Table of Wet Etching (Include All Materials).

Example Wet Etching Table

How to use the Master Table of Wet Etching:

When entering a new etch into the table make a row for every etchant used in the solution such that the information can be sorted by etchant. For example, the InP etch HCl:H3PO4(1:3) and H3PO4:HCl(3:1). Likewise, if etch is known to be selective to multiple materials the etch should have a row for each material. For example HCl:H3PO4(1:3) is selective to both InGaAs and InGaAsP.

This multiple entry method may seem laborious for the person entering a new etch, however the power of sorting by selective materials and chemicals in a table with all materials is great.

Material	Etchant	Rate (nm/min)	Anisotropy	Selective to	Selectivity	Ref.	Notes	Confirmed by	Extra column
InP	HCl:H3PO4(1:3)	~1000	Highly	InGaAs	High	Lamponi (p.102)	Example	Jon Doe	Example
InP	HCl:H3PO4(1:3)	~1000	Highly	InGaAsP	High	Lamponi (p.102)	Example	Jon Doe	Example
InP	H3PO4:HCl(3:1)	~1000	Highly	InGaAs	High	Lamponi (p.102)	Example	Jon Doe	Example
InP	H3PO4:HCl(3:1)	~1000	Highly	InGaAsP	High	Lamponi (p.102)	Example	Jon Doe	Example

The Master Table of Wet Etching (Include All Materials)

Material	Etchant	Rate (nm/min)	Anisotropy	Selective to	Selectivity	Ref.	Notes	Confirmed by	Extra column
InP	HCl:H3PO4(1:3)	~1000	Highly	InGaAs	High	Lamponi (p.102)	Example	Jon Doe	Example
InP	HCl:H3PO4(1:3)	~1000	Highly	InGaAsP	High	Lamponi (p.102)	Example	Jon Doe	Example
InP	H3PO4:HCl(3:1)	~1000	Highly	InGaAs	High	Lamponi (p.102)	Example	Jon Doe	Example
InP	H3PO4:HCl(3:1)	~1000	Highly	InGaAsP	High	Lamponi (p.102)	Example	Jon Doe	Example
Al2O3 (ALD Plasma 300C)	300MIF	~1.6			High	Measured in-house	Rate slows with time, Selective to most non-Al Materials	JTB	Example
Al2O3 (ALD Plasma 300C)	400K	~2.2			High	Measured in-house	Rate slows with time, Selective to most non-Al Materials	JTB	Example
Al2O3 (ALD Plasma 300C)	400K(1:4)	~1.6			High	Measured in-house	Rate slows with time, Selective to most non-Al Materials	JTB	Example
Al2O3 (ALD Plasma 300C)	NH4OH:H2O2:H2O (1:2:50)	~<0.5			High	Measured in-house	Rate slows with time	JTB	Example
Al2O3 (ALD Plasma 300C)	H2O2:NH4OH:H2O (2:1:50)	~<0.5			High	Measured in-house	Rate slows with time	JTB	Example
Al2O3 (IBD)	Buffered HF 49%	167				Measured in-house		Biljana Stamenic	2017-12
Al2O3 (IBD)	726 MiF Developer	3.5				Measured in-house		Demis D. John	2017-11
Al2O3 (AJA#4)	300 MiF	4.30				Measured in-house		Demis D. John	2018-02
SiO2 (PECVD #1)	Buffered HF 49%	~100				Measured in-house		Biljana Stamenic	2017
SiO2 (PECVD #2)	Buffered HF 49%	~500				Measured in-house		Biljana Stamenic	2017