Atomic Layer Deposition Recipes: Difference between revisions

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(→‎ZnO Deposition (ALD Chamber 1): added approx rate from old notes)
(added temps and plasma/reactant info)
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=== Pt deposition (ALD CHAMBER 1) ===
=== Pt deposition (ALD CHAMBER 1) ===
*Recipe name: '''''Ch1_TMCpPt+O3-300C'''''
*Recipe name: '''''Ch1_TMCpPt+O3-300C'''''
*Pt deposition rate ~ 0.5-0.6A/cyc
*Pt deposition rate ~ 0.5-0.6 A/cyc
⚫
*Conductivity data: (to be added)
*recipe utilizes the ozone generator which must be first set to the following conditions:
*recipe utilizes the ozone generator which must be first set to the following conditions:
**O<sub>2</sub> flow = 250sccm
**O<sub>2</sub> flow = 250sccm
**O<sub>3</sub> concentration = 15 wt%
**O<sub>3</sub> concentration = 15 wt%
*300°C Deposition
⚫
*Conductivity data: (to be added)


=== Ru deposition (ALD CHAMBER 1) ===
=== Ru deposition (ALD CHAMBER 1) ===
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* Ru deposition rate ~ 0.6-0.7A/cyc.
* Ru deposition rate ~ 0.6-0.7A/cyc.
* Conductivity data: (to be added)
* Conductivity data: (to be added)
* 300°C, O2 gas reaction


=== ZnO Deposition (ALD Chamber 1) ===
=== ZnO Deposition (ALD Chamber 1) ===
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* ZnO deposition rate ≈ 1.6 A/cycle
* ZnO deposition rate ≈ 1.6 A/cycle
*resistivity ≈ ''TBA''
*resistivity ≈ ''TBA''
*200°C Deposition, Water reaction


=== ZnO:Al deposition (ALD CHAMBER 1) ===
=== ZnO:Al deposition (ALD CHAMBER 1) ===
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*Recipe name: '''''Ch3_TMA+H2O-300C'''''
*Recipe name: '''''Ch3_TMA+H2O-300C'''''
**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1A/cyc
**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1A/cyc
**300°C Dep., Water reaction
*Recipe Name: CH3_TMA+H2O-XYZ?
*Recipe Name: CH3_TMA+H2O-XYZ?
**TBD
**TBD
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**AlN deposition rate ~ t.b.d.
**AlN deposition rate ~ t.b.d.
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**300°C Dep.


===HfO{{sub|2}} deposition (ALD CHAMBER 3)===
===HfO{{sub|2}} deposition (ALD CHAMBER 3)===
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**HfO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc
**HfO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc
**Note: deposition shows significant parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient.
**Note: deposition shows significant parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient.
**300°C Dep.


===SiO{{sub|2}} deposition (ALD CHAMBER 3)===
===SiO{{sub|2}} deposition (ALD CHAMBER 3)===
*Recipe name: '''''Ch3_TDMAS+250W/O*-300C'''''
*Recipe name: '''''Ch3_TDMAS+250W/O*-300C'''''
**SiO<sub>2</sub> deposition rate ~ 0.7-0.8A/cyc
**SiO<sub>2</sub> deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 250W, 5mTorr pressure
**Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.


===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===
===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===
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**ZrO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc
**ZrO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc
**Not directly characterized since results are basically the same as the HfO<sub>2</sub> process above.
**Not directly characterized since results are basically the same as the HfO<sub>2</sub> process above.
**300°C Dep.


===TiO{{sub|2}} deposition (ALD CHAMBER 3)===
===TiO{{sub|2}} deposition (ALD CHAMBER 3)===
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**TiO<sub>2</sub> deposition rate ~ 0.6A/cyc
**TiO<sub>2</sub> deposition rate ~ 0.6A/cyc
**Note: deposition shows parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient.
**Note: deposition shows parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient.
**300°C Dep.


===TiN deposition (ALD CHAMBER 3)===
===TiN deposition (ALD CHAMBER 3)===
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**TiN deposition rate ~ 0.7A/cyc
**TiN deposition rate ~ 0.7A/cyc
**Conductivity data: (to be added)
**Conductivity data: (to be added)
**300°C Dep, uses Plasma of N2 & H2 gases.

Revision as of 00:45, 30 October 2018

Back to Vacuum Deposition Recipes.

Atomic Layer Deposition (Oxford FlexAL)

Oxford FlexAL Chamber #1: Metals

Pt deposition (ALD CHAMBER 1)

  • Recipe name: Ch1_TMCpPt+O3-300C
  • Pt deposition rate ~ 0.5-0.6 A/cyc
  • Conductivity data: (to be added)
  • recipe utilizes the ozone generator which must be first set to the following conditions:
    • O2 flow = 250sccm
    • O3 concentration = 15 wt%
  • 300°C Deposition

Ru deposition (ALD CHAMBER 1)

  • Recipe name: Ch1_Ex03Ru[HPbub]+O2-300C
  • Ru deposition rate ~ 0.6-0.7A/cyc.
  • Conductivity data: (to be added)
  • 300°C, O2 gas reaction

ZnO Deposition (ALD Chamber 1)

Conductive film.

  • Recipe name: Ch1_DEZ+H2O-200C
  • ZnO deposition rate ≈ 1.6 A/cycle
  • resistivity ≈ TBA
  • 200°C Deposition, Water reaction

ZnO:Al deposition (ALD CHAMBER 1)

Al-Doped ZnO for variable resisitivity.

  • Recipe name: Ch1_DEZ/TMA+H2O-200C
    • The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.
  • Al dose fraction = 5% for lowest resistivity
  • ZnO deposition rate ~ 1.7A/cyc
  • resistivity ~ 4200uOhm.cm (390A film)

Oxford FlexAL Chamber #3: Dielectrics

Al2O3 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TMA+H2O-300C
    • Al2O3 deposition rate ~ 1A/cyc
    • 300°C Dep., Water reaction
  • Recipe Name: CH3_TMA+H2O-XYZ?
    • TBD

AlN deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TMA+100W/20N*-300C
    • AlN deposition rate ~ t.b.d.
    • Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
    • 300°C Dep.

HfO2 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TEMAH+H2O-300C
    • HfO2 deposition rate ~ 0.9-1.0A/cyc
    • Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
    • 300°C Dep.

SiO2 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TDMAS+250W/O*-300C
    • SiO2 deposition rate ~ 0.7-0.8A/cyc
    • Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.

ZrO2 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TEMAZ+H2O-300C
    • ZrO2 deposition rate ~ 0.9-1.0A/cyc
    • Not directly characterized since results are basically the same as the HfO2 process above.
    • 300°C Dep.

TiO2 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TDMAT+H2O-300C
    • TiO2 deposition rate ~ 0.6A/cyc
    • Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
    • 300°C Dep.

TiN deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TDMAT+N*/H*-300C
    • TiN deposition rate ~ 0.7A/cyc
    • Conductivity data: (to be added)
    • 300°C Dep, uses Plasma of N2 & H2 gases.
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