Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer): Difference between revisions
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https://www.nanotech.ucsb.edu/wiki/images/f/f1/SiO2_Etch_using_ICP2_with_O2-a.pdf |
[https://www.nanotech.ucsb.edu/wiki/index.php/File:SiO2_Etch_using_ICP2_with_O2-a.pdf https://www.nanotech.ucsb.edu/wiki/images/f/f1/SiO2_Etch_using_ICP2_with_O2-a.pdf] |
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Revision as of 17:42, 29 January 2019
| ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec | ||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) |
| 10/5/2018 | SiO2#01 | 95.2 | 0.74 | 77.9 |
| 1/28/19 | I21902 | 92.1 | 0.77 | |
https://www.nanotech.ucsb.edu/wiki/images/f/f1/SiO2_Etch_using_ICP2_with_O2-a.pdf