Laser Etch Monitoring: Difference between revisions

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== Overview ==
==Overview==
A number of our dry etching systems have Laser Etch monitors installed, for "endpoint detection". These systems allow you to end your etch at a known etch depth, or within a certain layer (with some caveats). This nearly eliminates the need to calibrate etch rates or to use timed etching only, which is especially important in our lab where etch rates can vary depending on the previous etches performed in the chamber.
A number of our dry etching systems have Laser Etch monitors installed, for "endpoint detection". These systems allow you to end your etch at a known etch depth, or within a certain layer (with some caveats). This nearly eliminates the need to calibrate etch rates or to use timed etching only, which is especially important in our lab where etch rates can vary depending on the previous etches performed in the chamber.


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Etching films that are transparent at the laser monitor wavelength (670nm) produces a sinusoidal signal due to optical wave interference which gives you numerous possible stopping points to end the etch upon.
Etching films that are transparent at the laser monitor wavelength (670nm) produces a sinusoidal signal due to optical wave interference which gives you numerous possible stopping points to end the etch upon.


== Procedures ==
==Procedures==


=== General Procedure ===
===General Procedure===
The basic method for performing an etch with laser monitoring endpoint, is as follows:
The basic method for performing an etch with laser monitoring endpoint, is as follows:
# Simulate or estimate what the laser monitor trace will look like, decide when to stop the etch according to the laser monitor plot.
# Mount the sample such that the laser will be able to reach a region to monitor the etch - typically ~100-300µm wide area.
# Load sample into chamber - wafer transfer '''only''', no etch.
# Align Laser onto area to monitor using co-axial microscope.
# Start laser power monitoring/logging.
# Start Etch (time set longer than expected etch time) - etch only, no wafer transfers.
## Closely observe laser monitor plot, comparing to known/simulated plot.
# Use "Next Step" or "End Step" when appropriate laser monitor trace is reached. Wait for process to complete any final steps.
# Transfer wafer out of chamber.
# Save laser monitor data, turn off laser & microscope illumination.


#Simulate or estimate what the laser monitor trace will look like, decide when to stop the etch according to the laser monitor plot.
=== Specific Procedures ===
#Mount the sample such that the laser will be able to reach a region to monitor the etch - typically ~100-300µm wide area.
#Load sample into chamber - wafer transfer '''only''', no etch.
#Align Laser onto area to monitor using co-axial microscope.
#Start laser power monitoring/logging.
#Start Etch (time set longer than expected etch time) - etch only, no wafer transfers.
##Closely observe laser monitor plot, comparing to known/simulated plot.
#Use "Next Step" or "End Step" when appropriate laser monitor trace is reached. Wait for process to complete any final steps.
#Transfer wafer out of chamber.
#Save laser monitor data, turn off laser & microscope illumination.

===Specific Procedures===
Procedures for specific machines are found on the following pages:
Procedures for specific machines are found on the following pages:
* [[Intellemetrics Laser Etch Monitor Procedure for Panasonic ICP Etchers]]
** Installed on [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]] & [[ICP Etch 2 (Panasonic E640)|ICP #2]]
* [[Intellemetrics Laser Etch Monitor Procedure for Plasma-Therm Etchers]]
** Installed on [[DSEIII (PlasmaTherm/Deep Silicon Etcher)|Plasma-Therm DSE-iii]] and [[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|Fluorine ICP Etcher]]
* [[Horiba Laser Etch Monitor Procedure for Unaxis VLR]]
* [[Custom Laser Etch Monitor Procedure for RIE|Custom Laser Etch Monitor Procedure for RIE#2]]
* [[Laser Etch Monitor Procedure for RIE5|Laser Etch Monitor Procedure for RIE5]]


*[[Intellemetrics Laser Etch Monitor Procedure for Panasonic ICP Etchers]]
== References ==
**Installed on [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]] & [[ICP Etch 2 (Panasonic E640)|ICP #2]]
*[[Intellemetrics Laser Etch Monitor Procedure for Plasma-Therm Etchers]]
**Installed on [[DSEIII (PlasmaTherm/Deep Silicon Etcher)|Plasma-Therm DSE-iii]] and [[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|Fluorine ICP Etcher]]
*[[Horiba Laser Etch Monitor Procedure for Unaxis VLR]]
*[[Custom Laser Etch Monitor Procedure for RIE|Custom Laser Etch Monitor Procedure for RIE#2]]
*[[Laser Etch Monitor Procedure for RIE5|Laser Etch Monitor Procedure for RIE5]]

==Examples==

=== Monitoring Photoresist Etch Rate ===
Even if you don't use the laser monitor to see when your etched material is removed, monitoring just the photoresist mask is itself very helpful. For example, you can tell exactly when the photoresist is fully etched through during an etch (even if by accident), allowing you to stop the etch at that time, and still determine selectivity if desired.
[[File:ARC etch + Cr etch - UV6 at 2krpm (900nm) survived v2 - screenshot.jpg|alt=example of photoresist monitor during etch.|none|thumb|900x900px|Monitoring photoresist during two sequential etches: (1) ARC Etch (short O2 etch) and subsequent (2) Chromium etch (Cl2/O2). Plot shows that the photoresist survived - sinusoid continued until etch stopped, indicated photoresist still present and being etched.]]
[[File:Annotated PR etch - Om1000 03 - ARC + Cl + PR etch v1.jpg|alt=annotated laser monitor plot of PR during a 3-step etch.|none|thumb|900x900px|Monitoring the photoresist during a 3-step etch. Etch (1) Etches the Anti-Reflection underlayer (BARC), (2) etches Chromium, and (3) intentionally etches the photoresist to remove it fully.]]
<br />
==References==
''See the following pages for more information about laser endpoint detection.''
''See the following pages for more information about laser endpoint detection.''

* [http://www.intellemetrics.com/LEP.htm Intellemetrics LEP]
*[http://www.intellemetrics.com/LEP.htm Intellemetrics LEP]
** ''The Intellemetrics Manuals are available on the tool computers in the lab - you can copy these to your Nanofiles Sync folder to access them remotely.''
**''The Intellemetrics Manuals are available on the tool computers in the lab - you can copy these to your Nanofiles Sync folder to access them remotely.''
* [[Laser Etch Monitor Simulation in Python|Simulation of Laser Endpoint Signal in Python]]
*[[Laser Etch Monitor Simulation in Python|Simulation of Laser Endpoint Signal in Python]]

Revision as of 18:26, 9 September 2019

Laser Etch Monitoring
Intellemetrics LEP500 Photo.jpg
Tool Type Dry Etch
Location ICP1, ICP2, Fluorine Etcher, DSE-iii
Supervisor Demis D. John
Supervisor Phone (805) 893-5934
Supervisor E-Mail demis@ucsb.edu
Description Laser Endpoint Detection for Dry Etching
Manufacturer Intellemetrics
Model LEP 500
Dry Etch Recipes


Overview

A number of our dry etching systems have Laser Etch monitors installed, for "endpoint detection". These systems allow you to end your etch at a known etch depth, or within a certain layer (with some caveats). This nearly eliminates the need to calibrate etch rates or to use timed etching only, which is especially important in our lab where etch rates can vary depending on the previous etches performed in the chamber.

Laser Etch monitoring works similarly to optical thin-film measurement via reflectivity spectra (eg. like our Filmetrics systems). However, instead of varying the optical wavelength and measuring a fixed thin-film, we measure a constant wavelength and a thin-film that is varying as it is etched. Thus, similar to the thin-film measurements, you can only measure a useful signal when the optical properties (reflection or interference) change during your etch.

For example, Etching from high-reflectivity Aluminum to Lower reflectivity Silicon will usually give you a clear drop showing that your Aluminum has been fully etched-through.

Etching films that are transparent at the laser monitor wavelength (670nm) produces a sinusoidal signal due to optical wave interference which gives you numerous possible stopping points to end the etch upon.

Procedures

General Procedure

The basic method for performing an etch with laser monitoring endpoint, is as follows:

  1. Simulate or estimate what the laser monitor trace will look like, decide when to stop the etch according to the laser monitor plot.
  2. Mount the sample such that the laser will be able to reach a region to monitor the etch - typically ~100-300µm wide area.
  3. Load sample into chamber - wafer transfer only, no etch.
  4. Align Laser onto area to monitor using co-axial microscope.
  5. Start laser power monitoring/logging.
  6. Start Etch (time set longer than expected etch time) - etch only, no wafer transfers.
    1. Closely observe laser monitor plot, comparing to known/simulated plot.
  7. Use "Next Step" or "End Step" when appropriate laser monitor trace is reached. Wait for process to complete any final steps.
  8. Transfer wafer out of chamber.
  9. Save laser monitor data, turn off laser & microscope illumination.

Specific Procedures

Procedures for specific machines are found on the following pages:

Examples

Monitoring Photoresist Etch Rate

Even if you don't use the laser monitor to see when your etched material is removed, monitoring just the photoresist mask is itself very helpful. For example, you can tell exactly when the photoresist is fully etched through during an etch (even if by accident), allowing you to stop the etch at that time, and still determine selectivity if desired.

example of photoresist monitor during etch.
Monitoring photoresist during two sequential etches: (1) ARC Etch (short O2 etch) and subsequent (2) Chromium etch (Cl2/O2). Plot shows that the photoresist survived - sinusoid continued until etch stopped, indicated photoresist still present and being etched.
annotated laser monitor plot of PR during a 3-step etch.
Monitoring the photoresist during a 3-step etch. Etch (1) Etches the Anti-Reflection underlayer (BARC), (2) etches Chromium, and (3) intentionally etches the photoresist to remove it fully.


References

See the following pages for more information about laser endpoint detection.