Plasma Clean (YES EcoClean): Difference between revisions
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The YES EcoClean system is an ICP downstream asher used for the removal of resist and other organic. 4" wafers are cassette loaded or smaller samples are loaded onto 4" carriers into the system. Samples can be heated from ~120C to 200C by controlling the sample height via the lift pins during process, while being exposed to ICP-cracked oxygen to remove organic materials. The excitation of the oxygen is done remotely and a baffle keeps ions from reaching the surface. Radicals diffuse and are scattered across the wafer surface for efficient cleaning and PR removal without any ion damage. Resist etch rates of multiple microns per minute can be achieved. See the process pages below for etch recipes for various resist removal recipes. |
The YES EcoClean system is an ICP downstream asher used for the removal of resist and other organic. 4" wafers are cassette loaded or smaller samples are loaded onto 4" carriers into the system. Samples can be heated from ~120C to 200C by controlling the sample height via the lift pins during process, while being exposed to ICP-cracked oxygen to remove organic materials. The excitation of the oxygen is done remotely and a baffle keeps ions from reaching the surface. Radicals diffuse and are scattered across the wafer surface for efficient cleaning and PR removal without any ion damage. Resist etch rates of multiple microns per minute can be achieved. See the process pages below for etch recipes for various resist removal recipes. |
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[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Recipe Pages]] |
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[https://www.yieldengineering.com/Products/Plasma-Strip-Descum-Systems/YES-%C3%89coClean YES EcoClean Manufacturer Page] |
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Revision as of 20:41, 20 September 2019
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About
The YES EcoClean system is an ICP downstream asher used for the removal of resist and other organic. 4" wafers are cassette loaded or smaller samples are loaded onto 4" carriers into the system. Samples can be heated from ~120C to 200C by controlling the sample height via the lift pins during process, while being exposed to ICP-cracked oxygen to remove organic materials. The excitation of the oxygen is done remotely and a baffle keeps ions from reaching the surface. Radicals diffuse and are scattered across the wafer surface for efficient cleaning and PR removal without any ion damage. Resist etch rates of multiple microns per minute can be achieved. See the process pages below for etch recipes for various resist removal recipes.