Plasma Activation (EVG 810): Difference between revisions

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==Documentation==
==Documentation==


*[https://www.nanotech.ucsb.edu/wiki/images/8/82/EVG_Plasma_Activation_SOP_Rev_B.pdf Plasma Activation Standard Operating Procedure]
*[https://wiki.nanotech.ucsb.edu/wiki/images/8/82/EVG_Plasma_Activation_SOP_Rev_B.pdf Plasma Activation Standard Operating Procedure]
*[https://www.nanotech.ucsb.edu/wiki/images/9/93/EVG_Plasma_Activation_Recipe_Copying.pdf How to copy recipes]
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/93/EVG_Plasma_Activation_Recipe_Copying.pdf How to copy recipes]


==Recipes==
==Recipes==

Revision as of 01:32, 7 April 2020

Plasma Activation (EVG 810)
EVG.jpg
Tool Type Dry Etch
Location Bay 7
Supervisor Lee Sawyer
Supervisor Phone (805) 893-2123
Supervisor E-Mail lee_sawyer@ucsb.edu
Description Plasma Surface Activation
Manufacturer EVG Group
Dry Etch Recipes
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About

This a capacitively coupled Oxygen plasma activation system used exclusively for the surface activation of clean surfaces prior to wafer bonding. This technique allows bonding temperatures to be lowered and is used as a companion tool to the Karl-Suss SB6 wafer bond tool.

Detailed Specifications

  • Gases used: O2 and N2
  • Sample size: pieces to 6” wafer
  • Max power: 200W
  • Recipes characterized for substrate thicknesses between 250um and 750um. Thicknesses outside of this range need to have parameters optimized to minimize reflective power.

Documentation

Recipes

Please see the Oxygen Plasma Recipe page for standard EVG recipes.

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