Atomic Layer Deposition Recipes: Difference between revisions
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(→Atomic Layer Deposition (Oxford FlexAL): note on plasma being faster) |
(→Al2O3 deposition (ALD CHAMBER 3): rate on AlOx / O* ~2x faster) |
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**Similar deposition rate |
**Similar deposition rate |
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**Oxygen Plasma reaction instead of H2O |
**Oxygen Plasma reaction instead of H2O |
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**Lower carbon content, faster |
**Lower carbon content, approx. <u>1.5–2x faster deposition rate.</u> |
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**Temperature variations: 300°C (std.), 200°C, 120°C |
**Temperature variations: 300°C (std.), 200°C, 120°C |
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*Recipe Name: '''''CH3-TMA+O3/200mT-300C''''' |
*Recipe Name: '''''CH3-TMA+O3/200mT-300C''''' |
Revision as of 14:46, 26 February 2021
Back to Vacuum Deposition Recipes.
Atomic Layer Deposition (Oxford FlexAL)
Oxford FlexAL Chamber #1: Metals
Maximum 30nm deposition thickness! (ask Tool Supervisor if needed.)
Note that Plasma-based (indicated by asterisk eg. N* or O*) recipes run nearly 2x faster than H2O/thermal recipes due to faster reaction rate, thus shorter cycling.
Pt deposition (ALD CHAMBER 1)
- Recipe name: Ch1_TMCpPt+O3-300C
- Pt deposition rate ~ 0.5-0.6 A/cyc
- Conductivity data: (to be added)
- recipe utilizes the ozone generator which must be first set to the following conditions:
- O2 flow = 250sccm
- O3 concentration = 15 wt%
- 300°C deposition
- Recipe name: CH1-TMCpPt+250W/O*-300C
- Uses Oxygen plasma
- 300°C deposition
Ru deposition (ALD CHAMBER 1)
- Recipe name: Ch1_Ex03Ru[HPbub]+O2-300C
- Ru deposition rate ~ 0.6-0.7A/cyc.
- Conductivity data: (to be added)
- 300°C, O2 gas reaction
ZnO Deposition (ALD Chamber 1)
Conductive film.
- Recipe name: Ch1_DEZ+H2O-200C
- ZnO deposition rate ≈ 1.6 A/cycle
- resistivity ≈ TBA
- 200°C Deposition, Water reaction
ZnO:Al deposition (ALD CHAMBER 1)
Al-Doped ZnO for variable resisitivity.
- Recipe name: Ch1_DEZ/TMA+H2O-200C
- The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.
- Al dose fraction = 5% for lowest resistivity
- ZnO deposition rate ~ 1.7A/cyc
- resistivity ~ 4200uOhm.cm (390A film)
Oxford FlexAL Chamber #3: Dielectrics
Maximum 30nm deposition thickness! (ask Tool Supervisor if needed.)
Al2O3 deposition (ALD CHAMBER 3)
- Recipe name: CH3-TMA+H2O-300C
- Al2O3 deposition rate ~ 1A/cyc
- 300°C Dep., Water reaction
- This is considered the standard recipe for ALD
- Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
- Recipe Name: CH3-TMA+250W/O*-300C
- Similar deposition rate
- Oxygen Plasma reaction instead of H2O
- Lower carbon content, approx. 1.5–2x faster deposition rate.
- Temperature variations: 300°C (std.), 200°C, 120°C
- Recipe Name: CH3-TMA+O3/200mT-300C
- Similar dep. rate
- Ozone (O3) reactant, experimental
AlN deposition (ALD CHAMBER 3)
- Recipe name: CH3-TMA+100W/N*-300C
- AlN deposition rate ~ t.b.d.
- Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
- Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
- Power variations: 300W, 400W (at 300°C)
- Nitrogen/Hydrogen variations: "30N*/30H*" at 200*C and 300°C
HfO2 deposition (ALD CHAMBER 3)
- Recipe name: CH3-TEMAH+H2O-300C
- HfO2 deposition rate ~ 0.9-1.0A/cyc
- Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
- Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
- Recipe name: CH3-TEMAH+250W/O*-300C
- Uses Oxygen plasma reactant instead of H2O
- Recipe name: CH3-TEMAH+O3/100mT-300C
- Uses Ozone (O3) for reactant instead of H2O
SiO2 deposition (ALD CHAMBER 3)
- Recipe name: CH3-TDMAS+250W/O*-300C
- SiO2 deposition rate ~ 0.7-0.8A/cyc
- Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
- Temperature variations: 300*C (std.), 250°C, 230°C, 200°C, 150°C, 120°C
- Recipe name: CH3-TDMAS+O3/200mT-300C
- Uses Ozone (O3) for reactant instead of H2O
ZrO2 deposition (ALD CHAMBER 3)
- Recipe name: CH3-TEMAZ+H2O-300C
- ZrO2 deposition rate ~ 0.9-1.0A/cyc
- Not directly characterized since results are basically the same as the HfO2 process above.
- Temperature variations: 300°C (std.), 200°C
- Recipe name: CH3-TEMAZ+250W/O*-300C
- Uses Oxygen plasma reactant instead of H2O
- Recipe name: CH3-TEMAZ+O3/100mT-300C
- Uses Ozone (O3) for reactant instead of H2O
TiO2 deposition (ALD CHAMBER 3)
- Recipe name: CH3-TDMAT+H2O-300C
- TiO2 deposition rate ~ 0.6A/cyc
- Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
- Temperature variations: 300°C (std.), 200°C, 120*C
- Recipe name: CH3-TDMAT+250W/O*-300C
- Uses Oxygen plasma reactant instead of H2O
TiN deposition (ALD CHAMBER 3)
- Recipe name: CH3-TDMAT+400W/12N*/4H*-300C
- TiN deposition rate ~ 0.7A/cyc
- Conductivity data: (to be added)
- Uses Plasma of N2 & H2 gases.
- Temperatures: 300°C (std.), 200°C
- Recipe name: CH3-TDMAT+100W/N*-300C
- Uses Plasma of N2 only
- Temperatures: 300°C (std.), 200°C
- Recipe name: CH3-TDMAT+100W/NH3*-300C
- Uses Plasma of NH3 only
- Temperatures: 300°C (std.), 200°C