Oxford ICP Etcher (PlasmaPro 100 Cobra): Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(first attempt at page)
 
(→‎Recipes: corrected link to recipes)
Line 10: Line 10:
|toolid=
|toolid=
}}
}}
== About ==
==About==


The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes.
The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes.
Line 19: Line 19:
The system also has an ''in situ'' optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.
The system also has an ''in situ'' optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.


== Detailed Specifications ==
==Detailed Specifications==


*ICP Power: ??? W
*ICP Power: ??? W
* RF Power: ??? W
*RF Power: ??? W
* Temperature Rnage: –40°C to +400°C
*Temperature Rnage: –40°C to +400°C
*Gases Available: ** CH<sub>4</sub>, H<sub>2</sub>, Ar, Cl<sub>2</sub>, BCl<sub>3</sub>, SF<sub>6</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, N<sub>2</sub>
*Gases Available: ** CH<sub>4</sub>, H<sub>2</sub>, Ar, Cl<sub>2</sub>, BCl<sub>3</sub>, SF<sub>6</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, N<sub>2</sub>
*He-back-side cooling
*He-back-side cooling
*100mm wafer held down with ceramic clamp., single-load
*100mm wafer held down with ceramic clamp., single-load
**Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive.
**Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive.
** Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.
**Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.
*Windows-based Cortex software control of process and wafer handling
*Windows-based Cortex software control of process and wafer handling
* Allowed Materials:
*Allowed Materials:
** InP-based epitaxies
**InP-based epitaxies
** GaAs-baased epitaxies
**GaAs-baased epitaxies
** GaN-based epitaxies
**GaN-based epitaxies
** Silicon only for ALE (no deep etching)
**Silicon only for ALE (no deep etching)
* Standard masking materials include:
*Standard masking materials include:
** SiO<sub>2</sub>
**SiO<sub>2</sub>
** Si<sub>3</sub>N<sub>4</sub>
**Si<sub>3</sub>N<sub>4</sub>
** photoresist (at << 100°C).
**photoresist (at << 100°C).

Other materials can be exposed to the chamber only with staff approval.
Other materials can be exposed to the chamber only with staff approval.

*Laser monitoring with camera and etch simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]
*Laser monitoring with camera and etch simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]


==Documentation==
==Documentation==

*{{file|Oxford PLasmaPro Operating Instructions.pdf|Oxford PlasmaPro Operating Instructions}}
*{{file|Oxford PLasmaPro Operating Instructions.pdf|Oxford PlasmaPro Operating Instructions}}
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]


== Recipes ==
==Recipes==

* [https://wiki.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#xyzxyz '''Oxford PlasmaPro Recipes'''] - Recipes specific to this tool.
* All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials.
*'''[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford PlasmaPro Recipes]]''' - Recipes specific to this tool.
*All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials.

Revision as of 22:00, 3 September 2021

Oxford ICP Etcher (PlasmaPro 100 Cobra)
OxfordPlasmaPro.jpg
Tool Type Dry Etch
Location Bay 2
Supervisor Tony Bosch
Supervisor Phone (805) 893-3486
Supervisor E-Mail bosch@ece.ucsb.edu
Description ICP Etches for III-V/ALE
Manufacturer Oxford Instruments
Model PlasmaPro 100 Cobra 300
Materials InP, GaAs, GaN, Silicon ALE
Dry Etch Recipes


About

The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes. The system has a load lock, wide temperature range with rapid heating/cooling, Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck. Small pieces may be placed on Silicon carrier wafers, with or without mounting adhesive. Helium back-side cooling is used to keep the sample cool during the etch, but pieces do heat up when placed on carriers.

The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. The system also has an in situ optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.

Detailed Specifications

  • ICP Power: ??? W
  • RF Power: ??? W
  • Temperature Rnage: –40°C to +400°C
  • Gases Available: ** CH4, H2, Ar, Cl2, BCl3, SF6, SiCl4, O2, N2
  • He-back-side cooling
  • 100mm wafer held down with ceramic clamp., single-load
    • Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive.
    • Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.
  • Windows-based Cortex software control of process and wafer handling
  • Allowed Materials:
    • InP-based epitaxies
    • GaAs-baased epitaxies
    • GaN-based epitaxies
    • Silicon only for ALE (no deep etching)
  • Standard masking materials include:
    • SiO2
    • Si3N4
    • photoresist (at << 100°C).

Other materials can be exposed to the chamber only with staff approval.

Documentation

Recipes

Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Oxford_ICP_Etcher_(PlasmaPro_100_Cobra)&oldid=159128"