Oxford ICP Etcher (PlasmaPro 100 Cobra): Difference between revisions
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*RF Power: ??? W |
*RF Power: ??? W |
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*Temperature Range: –40°C to +400°C |
*Temperature Range: –40°C to +400°C |
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*Gases Available: |
*Gases Available: CH<sub>4</sub>, H<sub>2</sub>, Ar, Cl<sub>2</sub>, BCl<sub>3</sub>, SF<sub>6</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, N<sub>2</sub> |
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*He-back-side cooling |
*He-back-side cooling |
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*100mm wafer held down with ceramic clamp., single-load |
*100mm wafer held down with ceramic clamp., single-load |
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**GaN-based epitaxies - ''discuss with staff'' |
**GaN-based epitaxies - ''discuss with staff'' |
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**GaSb-based epitaxies - ''discuss with staff'' |
**GaSb-based epitaxies - ''discuss with staff'' |
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**Atomic Layer Etching on select materials - ''discuss with staff'' |
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**Silicon only for ALE (no deep etching) |
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*Standard masking materials include: |
*Standard masking materials include: |
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**SiO<sub>2</sub> |
**SiO<sub>2</sub> |
Revision as of 18:19, 29 September 2021
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About
The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes. The system has a load lock, wide temperature range with rapid heating/cooling, Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck. Small pieces may be placed on Silicon carrier wafers, with or without mounting adhesive. Helium back-side cooling is used to keep the sample cool during the etch, but pieces do heat up when placed on carriers.
The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. The system also has an in situ optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.
Detailed Specifications
- ICP Power: ??? W
- RF Power: ??? W
- Temperature Range: –40°C to +400°C
- Gases Available: CH4, H2, Ar, Cl2, BCl3, SF6, SiCl4, O2, N2
- He-back-side cooling
- 100mm wafer held down with ceramic clamp., single-load
- Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive.
- Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.
- Windows-based Cortex software control of process and wafer handling
- Allowed Materials:
- InP-based epitaxies - qualified and ready
- GaAs-baased epitaxies - discuss with staff
- GaN-based epitaxies - discuss with staff
- GaSb-based epitaxies - discuss with staff
- Atomic Layer Etching on select materials - discuss with staff
- Standard masking materials include:
- SiO2
- Si3N4
- photoresist (at << 100°C).
Other materials can be exposed to the chamber only with staff approval.
- Laser monitoring with camera and etch simulation software: Intellemetrics LEP 500
Documentation
Recipes
- Oxford PlasmaPro Recipes - Recipes specific to this tool.
- All Dry Etching Recipes - use this list to see other options for dry etching various materials.