Plasma Activation (EVG 810): Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
No edit summary
(Updated SOP)
Line 23: Line 23:
==Documentation==
==Documentation==


*[https://wiki.nanotech.ucsb.edu/w/images/3/37/EVG_Plasma_Activation_SOP_Rev_C.pdf Plasma Activation Standard Operating Procedure]
*[https://wiki.nanotech.ucsb.edu/w/images/c/c0/EVG_Plasma_Activation_SOP_Rev_D.pdf Plasma Activation Standard Operating Procedure]
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/93/EVG_Plasma_Activation_Recipe_Copying.pdf How to copy recipes]
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/93/EVG_Plasma_Activation_Recipe_Copying.pdf How to copy recipes]


Revision as of 19:06, 15 September 2022

Plasma Activation (EVG 810)
EVG.jpg
Location Bay 7
Tool Type Dry Etch
Manufacturer EVG Group
Description Plasma Surface Activation
Primary Supervisor Lee Sawyer
(805) 893-2123
lee_sawyer@ucsb.edu

Secondary Supervisor

Aidan Hopkins

Recipes Dry Etch Recipes
SignupMonkey: Sign up for this tool


About

This a capacitively coupled Oxygen plasma activation system used exclusively for the surface activation of clean surfaces prior to wafer bonding. This technique allows bonding temperatures to be lowered and is used as a companion tool to the Karl-Suss SB6 wafer bond tool.

Detailed Specifications

  • Gases used: O2 and N2
  • Sample size: pieces to 6” wafer
  • Recipes characterized for substrate thicknesses between 250um and 750um. Thicknesses outside of this range need to have parameters optimized to minimize reflective power.

Documentation

Recipes

Please see the Oxygen Plasma Recipe page for standard EVG recipes.

Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Plasma_Activation_(EVG_810)&oldid=160468"