Process Group - Process Control Data: Difference between revisions

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Process Control Data are standardized process, run by staff, allowing for day-to-day or year-by-year comparisons of a tool's performance. This is similar (but not identical to) [https://en.wikipedia.org/wiki/Statistical_process_control Statistical Process Control].
Process Control Data are standardized processes, run by the NanoFab, allowing for day-to-day or year-by-year comparisons of a tool's performance at the process level. This is similar [https://en.wikipedia.org/wiki/Statistical_process_control Statistical Process Control (SPC)].


These are the same links found on individual tool pages, in the '''''Recipes > <<tool page>> > Process Control''''' section.
These are the same links are found on individual tool pages, in the '''''<<tool page>> > Process Control''''' section.


__TOC__
__TOC__


Data are collected by our [https://nanofab.ucsb.edu/workforce#internships Process Group Interns] and reviewed by [[Staff List#Process Group|Process Group Staff]].

=Deposition (Process Control Data)=
=Deposition (Process Control Data)=
''Process Control data for various deposition tools in the lab.''
''Process Control data for various deposition tools in the lab.''
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=== SiO2 Etching (FL-ICP Process Control) ===
=== SiO2 Etching (FL-ICP Process Control) ===
''We have found that SiO<sub>2</sub> etching is fairly insensitive to chamber condition.''

*[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit?usp=sharing SiO<sub>2</sub> Etching with CHF3/CF4 - '''Etch Data''']
*[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit?usp=sharing SiO<sub>2</sub> Etching with CHF3/CF4 - '''Etch Data''']
*[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281 SiO<sub>2</sub> Etching with CHF3/CF4 - '''Plots'''][[File:FL-ICP Process Control Data Example.jpg|alt=example of Process Control Charts|none|thumb|242x242px|[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281]]
*[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281 SiO<sub>2</sub> Etching with CHF3/CF4 - '''Plots'''][[File:FL-ICP Process Control Data Example.jpg|alt=example of Process Control Charts|none|thumb|242x242px|[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281]]
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=== Si Etching (FL-ICP Process Control) ===
=== Si Etching (FL-ICP Process Control) ===
''This Si etch is much more sensitive to chamber condition, allowing us to detect chamber contamination faster.''
'''Si Etching C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> (Fluorine ICP Etcher)'''


*SiVertHFv2 - Full Wafer Si etching with ~50% open area and resist mask
*'''Recipe: SiVertHFv2''' - C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> etch of 100mm Silicon Wafer with ~50% open area and resist mask


*[https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=0#gid=0 Si Etching with C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> - '''Etch Data''']
*[https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=0#gid=0 Si Etching with C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> - '''Etch Data''']
*[https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=1804752281#gid=1804752281 Si Etching with C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> - '''Plots'''][[File:FICP-Si.png|alt=example of Process Control Charts|none|thumb|242x242px|[https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=1804752281#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=1804752281#gid=1804752281]]
*[https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=1804752281#gid=1804752281 Si Etching with C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> - '''Plots'''][[File:FICP-Si.png|alt=example of Process Control Charts|none|thumb|242x242px|[https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=1804752281#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=1804752281#gid=1804752281]]


==[[ICP Etching Recipes#Process Control Data .28Panasonic 1.29|Panasonic ICP #1]]==
==[[ICP Etching Recipes#Process Control Data .28Panasonic 1.29|Panasonic ICP #1]]==



Revision as of 21:38, 6 November 2024

Process Control Data are standardized processes, run by the NanoFab, allowing for day-to-day or year-by-year comparisons of a tool's performance at the process level. This is similar Statistical Process Control (SPC).

These are the same links are found on individual tool pages, in the <<tool page>> > Process Control section.

Data are collected by our Process Group Interns and reviewed by Process Group Staff.

Deposition (Process Control Data)

Process Control data for various deposition tools in the lab.

PECVD #1 (PlasmaTherm 790)

PECVD #2 (Advanced Vacuum)

ICP-PECVD (Unaxis VLR Dep)

Ion Beam Sputter Deposition (Veeco Nexus)

Old Data (Pre 2022)

Old data in a different format can be found below:




Etching (Process Control Data)

Process Control data for various dry etching tools in the lab.

PlasmaTherm SLR Fluorine Etcher

SiO2 Etching (FL-ICP Process Control)

We have found that SiO2 etching is fairly insensitive to chamber condition.

OLD SiO2 Process Control Data

Si Etching (FL-ICP Process Control)

This Si etch is much more sensitive to chamber condition, allowing us to detect chamber contamination faster.

  • Recipe: SiVertHFv2 - C4F8/SF6/CF4 etch of 100mm Silicon Wafer with ~50% open area and resist mask

Panasonic ICP #1

Old Process Control Data

Panasonic ICP#2

Old Process Control Data

Unaxis VLR Etch

Oxford PlasmaPro Cobra Etcher

Calibration / Process testing data taken using the "InP Ridge Etch" process: Cl2/CH4/H2 @ 60°C, 1cm piece with ~50% SiO2 hardmask.

Old Process Control Data




Lithography (Process Control Data)

Process Control Data for Nanofab Lithography/patterning tools.

Stepper #3 (ASML DUV)

ASML CD Calibration data - Screenshot of Table
Example of Data Table with SEM's of 320nm features. Click for full data table.
ASML CD Calibration Data - Screenshot of SPC Plot
Example SPC Chart - Measured Critical Dimension "CD" versus Date. Click for charts.