Process Group - Process Control Data

Process Control Data are standardized processes, run by the NanoFab, allowing for day-to-day or year-by-year comparisons of a tool's performance at the process level. This is similar Statistical Process Control (SPC).

These are the same links are found on individual tool pages, in the <<tool page>> > Process Control section.

Data are collected by our Process Group Interns and reviewed by Process Group Staff.

Deposition, Dielectric (Process Control Data)

Example Process Control Charts (SPC) for thin-film DepCals.

Example particle counts taken on each tool+film.

Example of DepCals Thickness/Refractive Index uniformity measurement (4% shown here).

Process Control data for various deposition tools in the lab.

PECVD #1 (PlasmaTherm 790)

• PECVD#1: Plots of all data
• PECVD#1: SiO₂
• PECVD#1: Si₃N₄

PECVD #2 (Advanced Vacuum)

• PECVD#2: Plots of all data
• PECVD#2: SiO₂
• PECVD#2: Si₃N₄
• PECVD#2: Low-Stress Si₃N₄
  • Plots of Low-Stress Si₃N₄ Data

ICP-PECVD (Unaxis VLR Dep)

• ICP-PECVD: Plots of SiO₂ Films
• ICP-PECVD: Plots of Si₃N₄ Films
• ICP-PECVD: SiO₂ Low-Dep Rate (LDR)
• ICP-PECVD: SiO₂ High-Dep Rate (HDR)
• ICP-PECVD: Si₃N₄
• ICP-PECVD: Si₃N₄ Low-Stress

Ion Beam Sputter Deposition (Veeco Nexus)

• IBD: Plots of all data
• IBD: SiO₂
• IBD: Si₃N₄
• IBD: Ta₂O₅
• IBD: Al₂O₃
• IBD: TiO₂

Old Data (Pre 2022)

Old data in a different format can be found below:

• Old Deposition Data - 2021-12-15

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Deposition, Metal (Process Control Data)

Process Control data for various Metal evaporators in the lab.

E-Beam 4 (CHA)

• E-Beam 4 Ti: Titanium Datasheet & Titanium Plots
• E-Beam 4 Au: Gold Datasheet & Gold Plots
• E-Beam 4 Cr: Chromium Datasheet & Chromium Plots
• E-Beam 4 Ni: Nickel Datasheet & Nickel Plots

E-Beam 1 (Sharon)

Coming Soon...

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Etching (Process Control Data)

Process Control data for various dry etching tools in the lab.

PlasmaTherm SLR Fluorine Etcher

SiO₂ Etching (FL-ICP Process Control)

We have found that SiO₂ etching is fairly insensitive to chamber condition.

• SiO₂ Etching with CHF₃/CF₄ - Etch Data
• SiO₂ Etching with CHF₃/CF₄ - Plots
  

  Click for Process Control Charts

Old SiO₂ Process Control Data

• SiO₂ Etching with CHF₃/CF₄ (FL-ICP) - No data prior to 2023-01-20

Si Etching (FL-ICP Process Control)

This Si etch is much more sensitive to chamber condition, allowing us to detect chamber contamination faster.

• Recipe: SiVertHFv2 - C₄F₈/SF₆/CF₄ etch of 100mm Silicon Wafer with ~50% open area and resist mask

• Si Etching with C₄F₈/SF₆/CF₄ - Etch Data
• Si Etching with C₄F₈/SF₆/CF₄ - Plots
  

  Click for Process Control Charts

Panasonic ICP #1

• SiO₂ Etch with CHF₃/CF₄ - Etch Data
• SiO₂ Etch with CHF₃/CF₄ - Plots
  

  Click for Process Control Charts

Old Process Control Data

• SiO₂ Etch with CHF₃/CF₄ (Panasonic 1) - No data prior to 2023-01-20

Panasonic ICP#2

• SiO₂ Etch with CHF₃/CF₄ - Etch Data
• SiO₂ Etch with CHF₃/CF₄ - Plots
  

  Click for Process Control Charts

Old Process Control Data

• SiO₂ Etching with CHF₃/CF₄ - ICP2 - No data prior to 2023-01-20

Unaxis VLR Etch

• InP Etching with Cl₂/N₂ @ 200°C - Unaxis Etch

Oxford PlasmaPro Cobra Etcher

InP Ridge Etch: Cl₂/CH₄/H₂/60°C

Calibration / Process testing data taken using the "InP Ridge Etch" process: Cl2/CH4/H2 @ 60°C, 1cm piece with ~50% SiO2 hardmask.

• "Std InP Ridge Etch" Cl₂/CH₄/H₂/60°C - Etch Data Tables
• "Std InP Ridge Etch" Cl₂/CH₄/H₂/60°C - Plots
  

  Click for Process Control Charts

Old InP Ridge Etch Data

• InP Ridge Etch with Cl₂/CH₄/H₂ @ 60°C - No data prior to 2023-01-20

GaN Etch (Cl2/BCl3/Ar/200°C)

Recipe: Std GaN Etch - BCl3/Cl2/Ar - 200C (Public), on 1cm x 1cm ~1.2µm deep GaN etch with Cl2/BCl3/Ar at 200°C. Sapphire substrate with SiO2 mask for GaN.

• GaN Etching with Cl2/BCl3/Ar at 200°C - Etch Data
• GaN Etching with Cl2/BCl3/Ar at 200°C - Plots
  

  Click for Process Control Charts

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PlasmaTherm DSEIII Deep Silicon Etcher

Si Bosch Etching C₄F₈/SF₆/Ar

• Recipe: STD_Bosch_Si (⭐️Production), on 100mm Si Wafer with ~50% open area, photoresist mask, ~40µm deep

• Si Etching with C₄F₈/SF₆/Ar - Etch Data
• Si Etching with C₄F₈/SF₆/Ar - Plots
  

  Click for Process Control Charts

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Lithography (Process Control Data)

Process Control Data for Nanofab Lithography/patterning tools.

Stepper #3 (ASML DUV)

• The Process Group regularly measures data on lithography Critical Dimension ("CD") and Wafer-stage Particulate Contamination for this tool, using a sensitive lithography process that will reveal small changes in Dose repeatability and wafer flatness.
• Plots of CD Repeatability
• Data for CD Uniformity and Particulate Contamination

Example of Data Table with SEM's of 320nm features. Click for full data table.

Example SPC Chart - Measured Critical Dimension "CD" versus Date. Click for charts.