RIE Etching Recipes: Difference between revisions

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*O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec
*O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec
*No need to pump/purge, can etch right away.
*No need to pump/purge, can etch right away
*No helium cooling, Run in manual mode.
*No helium cooling
*Can run in manual mode

Latest revision as of 03:13, 17 July 2026

Back to Dry Etching Recipes.

RIE 2 (MRC)

CdZnTe Etching (RIE 2)

ZnS Etching (RIE 2)

ITO Etching (RIE 2)

InP-InGaAsP-InGaAlAs Etching (RIE 2)

RIE 5 (PlasmaTherm)

AlGaAs\GaAs Etching (RIE 5)

GaN Etching (RIE 5)

Photoresist and ARC (RIE 5)

DUV42P (AR2) etching

  • O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec
  • No need to pump/purge, can etch right away
  • No helium cooling
  • Can run in manual mode