Lift-off DUV Lift-off: LOR Underlayers: Difference between revisions
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alex spott's recipe |
m John d moved page Lift-off DUV Lift-off: UV6 imaging resist + LOR Underlayers to Lift-off DUV Lift-off: LOR Underlayers: need more generic process title |
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Revision as of 22:32, 23 September 2026
LOR30C
- Dehydrate (O2 plasma or 150°C, 2 min+), no adhesion promoter
- Spin LOR30C at various speeds depending on thickness desired
- 180°C, 4 min
- Spin/bake imaging layer - according to Imaging PR recipe
- Expose ASML
- Post-bake imaging layer - according to Imaging PR recipe
- Develop AZ 300MiF - varies:
- Develop times range between 2 min to as long as 6 or 8 minutes (it's consistent for the same mask and same materials, but varies for process steps, topography, and materials).
- Strips in 80C NMP 20–30 min
Pros: Thick in a single layer, excellent coverage for tall features, varying topography, and filling vias. Rarely has cracking issues, no ramp baking required, typically minimal bubbles from feature corners.
Cons: High and uncontrollable undercut. You can't switch to flood expose / 101A like you can with PMGI so you're stuck with the undercut you get whenever it's done developing. Not suitable for close features.
Contributed by Alex Spott.