Lift-off DUV Lift-off: LOR Underlayers: Difference between revisions
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m John d moved page Lift-off DUV Lift-off: UV6 imaging resist + LOR Underlayers to Lift-off DUV Lift-off: LOR Underlayers: need more generic process title |
added LOR 10A recipe from alex spott |
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=== LOR10A - ~1µm underlayer === |
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|Dehydration bake |
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|≥150°C |
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|5 min |
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|Spin LOR10A |
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|Recipe 5: 3000 rpm |
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|Backside clean |
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|Spin/spray: Remover PG / Acetone / IPA |
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|required for ASML DUV |
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|Softbake |
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|200°C on lift-pins. |
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Use recipe: "''STD 200C 5min''" |
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|5 min |
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|Spin LOR10A |
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|Recipe 5: 3000 rpm |
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|Backside clean |
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|Spin/spray: Remover PG / Acetone / IPA |
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|Softbake |
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|200 C on pins. Use recipe 200 C 5 min. |
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|5 min |
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|Spin UV6-0.8 |
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|Recipe 6 3500 rpm |
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|Softbake |
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|135C |
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|1 min |
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|Backside clean |
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|Spin/spray Acetone/IPA |
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|Expose |
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|~21-25mJ - you may need to optimize |
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Focus = +0.2 |
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|ASML |
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|Post exposure bake |
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|135C |
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|90 sec |
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|Develop AZ726MIF |
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|no agitation |
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|usually > 2.5min |
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|Microscope Inspect |
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|Check undercut |
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|Typ. ~1-2µm |
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=== LOR30C - ~30µm underlayer === |
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# Dehydrate (O2 plasma or 150°C, 2 min+), no adhesion promoter |
# Dehydrate (O2 plasma or 150°C, 2 min+), no adhesion promoter |
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Revision as of 22:39, 23 September 2026
LOR10A - ~1µm underlayer
| Dehydration bake | ≥150°C | 5 min |
| Spin LOR10A | Recipe 5: 3000 rpm | |
| Backside clean | Spin/spray: Remover PG / Acetone / IPA | required for ASML DUV |
| Softbake | 200°C on lift-pins.
Use recipe: "STD 200C 5min" |
5 min |
| Spin LOR10A | Recipe 5: 3000 rpm | |
| Backside clean | Spin/spray: Remover PG / Acetone / IPA | |
| Softbake | 200 C on pins. Use recipe 200 C 5 min. | 5 min |
| Spin UV6-0.8 | Recipe 6 3500 rpm | |
| Softbake | 135C | 1 min |
| Backside clean | Spin/spray Acetone/IPA | |
| Expose | ~21-25mJ - you may need to optimize
Focus = +0.2 |
ASML |
| Post exposure bake | 135C | 90 sec |
| Develop AZ726MIF | no agitation | usually > 2.5min |
| Microscope Inspect | Check undercut | Typ. ~1-2µm |
LOR30C - ~30µm underlayer
- Dehydrate (O2 plasma or 150°C, 2 min+), no adhesion promoter
- Spin LOR30C at various speeds depending on thickness desired
- 180°C, 4 min
- Spin/bake imaging layer - according to Imaging PR recipe
- Expose ASML
- Post-bake imaging layer - according to Imaging PR recipe
- Develop AZ 300MiF - varies:
- Develop times range between 2 min to as long as 6 or 8 minutes (it's consistent for the same mask and same materials, but varies for process steps, topography, and materials).
- Strips in 80C NMP 20–30 min
Pros: Thick in a single layer, excellent coverage for tall features, varying topography, and filling vias. Rarely has cracking issues, no ramp baking required, typically minimal bubbles from feature corners.
Cons: High and uncontrollable undercut. You can't switch to flood expose / 101A like you can with PMGI so you're stuck with the undercut you get whenever it's done developing. Not suitable for close features.
Contributed by Alex Spott.