PECVD Recipes: Difference between revisions
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=== SiO<sub>2</sub> (100% SiH<sub>4</sub> LDR) === |
=== SiO<sub>2</sub> (100% SiH<sub>4</sub> LDR) === |
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!width=350 align=center|50° |
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!width=350 align=center|100° |
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!width=350 align=center|250° |
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*[[Media:PECVD2-SiO2-Recipe-100%SiH4-LDR-50C.pdf|SiO<sub>2</sub> Deposition Recipe - LDR (50°)]] |
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*[[Media:PECVD2-SiO2-Recipe-100%SiH4-LDR-100C.pdf|SiO<sub>2</sub> Deposition Recipe - LDR (100°)]] |
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*[[Media:PECVD2-SiO2-LDR-100% SiH4.pdf|SiO<sub>2</sub> Comparison Table - LDR (100°)]] |
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*[[Media:PECVD2-SiO2-SEM-LDR SiO2-100% SiH4-100C-15W.pdf|SiO<sub>2</sub> SEM sidewall coverage]] |
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*[[Media:PECVD2-SiO2-Recipe-100%SiH4-LDR-250C.pdf|SiO<sub>2</sub> Deposition Recipe - LDR (250°)]] |
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*[[Media:PECVD2-SiO2-LDR-100% SiH4.pdf|SiO<sub>2</sub> Comparison Table - LDR (250°)]] |
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=== Amorphous Si (100% SiH<sub>4</sub> Ar He) === |
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Revision as of 17:56, 4 September 2013
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Deposition Recipe
- SiN Deposition Particle Thickness Data
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
SiO2 deposition (PECVD #1)
SiOxNy deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
50° | 100° | 250° |
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SiN (2% SiH4 - No-Ar - Extra N2)
50° | 100° | 250° |
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SiN (100% SiH4 )
50° | 100° | 250° |
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SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
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SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
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SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
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SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
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Amorphous Si (100% SiH4 Ar He)
50° | 100° | 250° |
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