Ashers (Technics PEII)

Ashers (Technics PEII) Tool Type Dry Etch Location Bay 5 Supervisor Mike Day Supervisor Phone (805) 893-3101 Supervisor E-Mail day@ece.ucsb.edu Description Plasma Etching Systems Manufacturer Technics Model PE II-A Dry Etch Recipes

About

These two parallel plate plasma etching systems are generally used to clean organic residue off of semiconductor wafers (ashing), etch organic films, or etch Si₃N₄ films. The systems are both equipped with O₂ for organic removal. In addition to organic removal, the oxygen plasma is also useful for changing the surface polarity of organic films to facilitate wetting of water-based surface etchants. This is very important for wet-etch processing through small, high aspect ratio photoresist holes or lines. One system also has CF₄/O₂ 88% / 12% for etching Si₃N₄. These systems are operated manually and no sign-up is required.

Detailed Specifications

• Gases used: CF₄ / O₂ (88%/12%) and O₂
• ~ 10mT ultimate chamber pressure
• 100 kHz directly coupled excitation source
• Sample size: pieces to 6” wafers
• Gas flow and power control
• Typical process conditions:
  • Ashing: O2 300mT, 100W power, 30 sec.
  • Si3N4 Etching: CF₄/O₂ 300mT, 100W, ~ 150 nm / min. etch rate