PECVD 2 (Advanced Vacuum)

PECVD 2 (Advanced Vacuum) Tool Type Vacuum Deposition Location Bay 2 Supervisor Brian Lingg Supervisor Phone (805) 893-8145 Supervisor E-Mail lingg_b@ucsb.edu Description Vision 310 Advanced Vacuum PECVD Manufacturer Veeco Vacuum Deposition Recipes Sign up for this tool

About

This open-load system is dedicated to PECVD of SiO₂, SiN_x, SiO_xN_y, and a-Si using Silane (2%SiH₄, 98% He), N₂O, NH₃, and N₂ gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.

Recipes & Historical Data

• Recipes for SiO2, Si3N4 and Low-Stress Si3N4 can be found on the PECVD Recipes Page:
  • Recipes > Vacuum Deposition Recipes > PECVD Recipes > PECVD 2 - Advanced Vacuum
  • Historical (Process Control) Data is also shown here.
• A list of all available deposited films can be found on the Vacuum Deposition Recipes page:
  • Recipes > Vacuum Deposition Recipes

See Also

• Vision 310 Product Page

Documentation

• Operating Instructions
• Wafer Coating Process Traveler
• For particle counting method, see the Surfscan Scanning Procedure