About
Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO2, Si3N4, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.
Detailed Specifications
- Max. Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 3 min.
- Maximum ramp rate of 50°C/Sec.
- Oxygen, Nitrogen and Forming Gas flows up to 10LPM.
- TC use for anneals up to 1200°C
- Windows-based process monitoring and control software by Sedona Visual Controls
Max temp/Time
| Temperature |
Time
|
| 1000°C |
1 Hour
|
| 1100°C |
10 min
|
| 1200°C |
3 min
|
| 1300°C |
10 sec
|
Documentation
