Process Group - Process Control Data

Process Control Data are standardized process, run by staff, allowing for day-to-day or year-by-year comparisons of a tool's performance. This is similar (but not identical to) Statistical Process Control.

These are the same links found on individual tool pages, in the Recipes > <<tool page>> > Process Control section.

Deposition (Process Control Data)

Process Control data for various deposition tools in the lab.

PECVD #1 (PlasmaTherm 790)

• PECVD#1: Plots of all data
• PECVD#1: SiO₂
• PECVD#1: Si₃N₄

PECVD #2 (Advanced Vacuum)

• PECVD#2: Plots of all data
• PECVD#2: SiO₂
• PECVD#2: Si₃N₄
• PECVD#2: Low-Stress Si₃N₄
  • Plots of Low-Stress Si₃N₄ Data

ICP-PECVD (Unaxis VLR Dep)

• ICP-PECVD: Plots of SiO₂ Films
• ICP-PECVD: Plots of Si₃N₄ Films
• ICP-PECVD: SiO₂ Low-Dep Rate (LDR)
• ICP-PECVD: SiO₂ High-Dep Rate (HDR)
• ICP-PECVD: Si₃N₄
• ICP-PECVD: Si₃N₄ Low-Stress

Ion Beam Sputter Deposition (Veeco Nexus)

• IBD: Plots of all data
• IBD: SiO₂
• IBD: Si₃N₄
• IBD: Ta₂O₅
• IBD: Al₂O₃
• IBD: TiO₂

Old Data (Pre 2022)

Old data in a different format can be found below:

• Old Deposition Data - 2021-12-15

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Etching (Process Control Data)

Process Control data for various dry etching tools in the lab.

PlasmaTherm SLR Fluorine Etcher

SiO2 Etching (FL-ICP Process Control)

• SiO₂ Etching with CHF3/CF4 - Etch Data
• SiO₂ Etching with CHF3/CF4 - Plots
  

  Click for Process Control Charts

OLD SiO2 Process Control Data

• SiO₂ Etching with CHF3/CF4 (FL-ICP) - No data prior to 2023-01-20

Si Etching (FL-ICP Process Control)

Si Etching C₄F₈/SF₆/CF₄ (Fluorine ICP Etcher)

• SiVertHFv2 - Full Wafer Si etching with ~50% open area and resist mask

• Si Etching with C₄F₈/SF₆/CF₄ - Etch Data
• Si Etching with C₄F₈/SF₆/CF₄ - Plots
  

  Click for Process Control Charts

Panasonic ICP #1

• SiO₂ Etch with CHF₃/CF₄ - Etch Data
• SiO₂ Etch with CHF₃/CF₄ - Plots
  

  Click for Process Control Charts

Old Process Control Data

• SiO₂ Etch with CHF₃/CF₄ (Panasonic 1) - No data prior to 2023-01-20

Panasonic ICP#2

• SiO2 Etch with CHF3/CF4 - Etch Data
• SiO2 Etch with CHF3/CF4 - Plots
  

  Click for Process Control Charts

Old Process Control Data

• SiO2 Etching with CHF3/CF4 - ICP2 - No data prior to 2023-01-20

Unaxis VLR Etch

• InP Etching with Cl2/N2 @ 200°C - Unaxis Etch

Oxford PlasmaPro Cobra Etcher

Calibration / Process testing data taken using the "InP Ridge Etch" process: Cl2/CH4/H2 @ 60°C, 1cm piece with ~50% SiO2 hardmask.

• "Std InP Ridge Etch" Cl₂/CH₄/H₂/60°C - Etch Data Tables
• "Std InP Ridge Etch" Cl₂/CH₄/H₂/60°C - Plots
  

  Click for Process Control Charts

Old Process Control Data

• InP Ridge Etch with Cl2/CH4/H2 @ 60°C - No data prior to 2023-01-20

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Lithography (Process Control Data)

Process Control Data for Nanofab Lithography/patterning tools.

Stepper #3 (ASML DUV)

• The Process Group regularly measures data on lithography Critical Dimension ("CD") and Wafer-stage Particulate Contamination for this tool, using a sensitive lithography process that will reveal small changes in Dose repeatability and wafer flatness.
• Plots of CD Repeatability
• Data for CD Uniformity and Particulate Contamination

Example of Data Table with SEM's of 320nm features. Click for full data table.

Example SPC Chart - Measured Critical Dimension "CD" versus Date. Click for charts.