PECVD 2 (Advanced Vacuum)

PECVD 2 (Advanced Vacuum) Tool Type Vacuum Deposition Location Bay 2 Supervisor Mike Silva Supervisor Phone (805) 893-3096 Supervisor E-Mail silva@ece.ucsb.edu Description Vision 310 Advanced Vacuum PECVD Manufacturer Veeco Vacuum Deposition Recipes Sign up for this tool

About

This open-load system is dedicated to PECVD of SiO₂, SiN_x, SiO_xN_y, and a-Si using Silane (2%SiH₄, 98% He), N₂O, NH₃, and N₂ gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.

See Also

• Vision 310 Product Page

Documentation

• Operating Instruction Manual for Advanced PECVD 2
• Advanced PECVD 2 Standard Recipes
• Advanced PECVD 2 Data-particles, thickness, index