Vacuum Deposition Recipes

This table can be used to help located the needed recipe.

Table

Vacuum Deposition Recipes
	E-Beam Evaporation				Sputtering					Thermal Evaporation		Plasma Enhanced Chemical Vapor Deposition (PECVD)			Atomic Layer Deposition	Ion-Beam Deposition (IBD)	Molecular Vapor Deposition
Material	E-Beam 1 (Sharon)	E-Beam 2 (Custom)	E-Beam 3 (Temescal)	E-Beam 4 (CHA)	Sputter 1 (Custom)	Sputter 2 (SFI Endeavor)	Sputter 3 (ATC 2000-F)	Sputter 4 (ATC 2200-V)	Sputter 5 (Lesker AXXIS)	Thermal 1	Thermal 2	PECVD 1 (PlasmaTherm 790)	PECVD 2 (Advanced Vacuum)	Unaxis VLR ICP-PECVD
Ag	Y
Al
Al2O3
AlN
Au
B
Co
Cr
Cu
Fe
Ge
Hf
HfO2
In
Ir
ITO
Mo
Bn
Ni
Pd
Pt
Ru
Si
SiN												Y	[[Vacuum Deposition Recipes#SiN deposition (PECVD #2)|Y
SiO2													Y
SiOxNy
Sn
SrF2
Ta
Ta2O5
Ti
TiN
TiO2
V
W
Zn
ZnO2
Zr
ZrO2

E-Beam Evaporation

Recipe 1

1. Step 1 ....
2. Step 2...

Plasma Enhanced Chemical Vapor Deposition (PECVD)

SiN deposition (PECVD #1)

1. Clean (30CLN_SN)
   1. Initial t=10", p=2x10-2, T=250C
   2. N2 Purge t=30", p=300mT
   3. evacuate, base pressure=2x10-2, t=10"
   4. loop
   5. gas stabilization, t=30"
   6. etch chamber, t=30'
   7. evacuate, t=10"
   8. N2 purge
   9. evacuate
   10. loop
   11. SiN gas stabilization
   12. SiN deposition( 200A coat)
   13. evacuate
   14. N2purge, t=30"
   15. end
2. SiN deposition (SiN_10) 130.8 A/min
   1. Initial t=10"
   2. N2 purge t=30"
   3. evacuate, t=10"
   4. loop
   5. SiN gas stabilization, t=30"
   6. SiN deposition t=8'11.2"
   7. evacuate, t=10"
   8. N2 purge t=30"
   9. evacuate t=10"
   10. loop

SiN deposition (PECVD #2)

1. Standard clean
   1. Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
   2. Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
   3. High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
   4. Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
2. 'Nitride 2 (HF, n=2.0, 93nm/min)
   1. process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17

SiO₂ deposition (PECVD #2)

1. Standard clean
   1. Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
   2. Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
   3. High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
   4. Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
2. Oxide (HF, n=1.46, 25nm/min)
   1. process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420