Wet Etching Recipes
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References
- Etch rates for Micromachining Processing (IEEE Jnl. MEMS, 1996) - includes tables of etch rates of numerous metals vs. various wet and dry etchants.
- Etch rates for micromachining-Part II (IEEE Jnl. MEMS, 2003) - expanded tables containing resists, dielectrics, metals and semiconductors vs. many wet etch chemicals.
- Guide to references on III±V semiconductor chemical etching - exhaustive list of wet etchants for etching various semiconductors, including selective etches.
- Transene's Chemical Compatibility Chart provides a useful quick-reference for which Transene etchants attack which materials.
- As a side-note, Transene provides many pre-mixed solutions that you can order, saving you the time and uncertainty of measuring/mixing such chemicals yourself. Make sure you check with us before ordering so we know how to handle the chemical before it arrives.
References 2
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Compound Semiconductor Etching
Guide to references on III±V semiconductor chemical etching
Please add any confirmed etches from this reference to the The Master Table of Wet Etching (Include All Materials).
Metal Etching
- Selective Wet Etch of Cr over Ta using Cr Etchant
- Wet Etch of ITO using Heated, Diluted HCl Solution
Silicon etching
Etch rates for micromachining processing
Etch rates for micromachining processing-part II
Please add any confirmed etches from this reference to the The Master Table of Wet Etching (Include All Materials).
Dielectric etching
Organic removal
Gold Plating
Chemi-Mechanical Polishing (CMP)
Example Wet Etching Table
How to use the Master Table of Wet Etching:
When entering a new etch into the table make a row for every etchant used in the solution such that the information can be sorted by etchant. For example, the InP etch HCl:H3PO4(1:3) and H3PO4:HCl(3:1). Likewise, if etch is known to be selective to multiple materials the etch should have a row for each material. For example HCl:H3PO4(1:3) is selective to both InGaAs and InGaAsP.
This multiple entry method may seem laborious for the person entering a new etch, however the power of sorting by selective materials and chemicals in a table with all materials is great.
| Material | Etchant | Rate (nm/min) | Anisotropy | Selective to | Selectivity | Ref. | Notes | Confirmed by | Extra column |
|---|---|---|---|---|---|---|---|---|---|
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
The Master Table of Wet Etching (Include All Materials)
Use the ↑ ↓ Arrows in the header row to sort the entire table by material, selectivity, etchant etc.
| Material | Etchant | Rate (nm/min) | Anisotropy | Selective to | Selectivity | Ref. | Notes | Confirmed by | Extra Notes |
|---|---|---|---|---|---|---|---|---|---|
| InP | HCl:H3PO4 (1:3) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | HCl:H3PO4 (1:3) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | H3PO4:HCl (3:1) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | H3PO4:HCl (3:1) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
| Al2O3 (ALD Plasma 300C) | Developer: 300MIF | ~1.6 | None | Most non-Al Materials. | High | Measured in-house | Rate slows with time. | JTB | Example |
| Al2O3 (ALD Plasma 300C) | Developer: 400K | ~2.2 | None | Most non-Al Materials. | High | Measured in-house | Rate slows with time. | JTB | Example |
| Al2O3 (ALD Plasma 300C) | Developer: 400K (1:4) | ~1.6 | None | Most non-Al Materials. | High | Measured in-house | Rate slows with time. | JTB | Example |
| Al2O3 (ALD Plasma 300C) | NH4OH:H2O2:H2O (1:2:50) | ~<0.5 | Measured in-house | Rate slows with time | JTB | Example | |||
| Al2O3 (IBD) | HF ("Buffered HF Improved", Transene) | ~170 | None | Photoresist | High | Measured in-house | May need to increase adhesion with thin SiO2 layer, and 100°C baked HMDS. | Biljana Stamenic | 2017-12 |
| Al2O3 (IBD) | Developer: 726 MiF | 3.5 | None | Most non-Al Materials. | Measured in-house | Demis D. John | 2017-11 | ||
| Al2O3 (AJA#4) | Developer: 300 MiF | 4.30 | None | Most non-Al Materials. | Measured in-house | Demis D. John | 2018-02 | ||
| SiO2 (PECVD #1) | HF ("Buffered HF Improved", Transene) | ~500 | None | Photoresist | High | Measured in-house | May need to increase adhesion with 100°C baked HMDS. | Biljana Stamenic | 2017 |
| SiO2 (PECVD #2) | HF ("Buffered HF Improved", Transene) | ~500 | None | Photoresist | High | Measured in-house | May need to increase adhesion with 100°C baked HMDS. | Biljana Stamenic | 2017 |
| SiO2 (IBD) | HF ("Buffered HF Improved", Transene) | ~350 | None | Photoresist | High | Measured in-house | Biljana Stamenic | 2016 | |
| Si3N4 (PECVD#1) | HF ("Buffered HF Improved", Transene) | 85 | None | Photoresist | High | Measured in-house | Biljana Stamenic | 2018-04 | |
| Si3N4 (PECVD#2) | HF ("Buffered HF Improved", Transene) | 35–45 | None | Photoresist | High | Measured in-house | Biljana Stamenic | 2018-05 | |
| Si3N4 Low-Stress (PECVD#2) | HF ("Buffered HF Improved", Transene) | 35–50 | None | Photoresist | High | Measured in-house | Biljana Stamenic | 2018-05 | |
| Si3N4 (IBD) | HF ("Buffered HF Improved", Transene) | 5–15 | None | Photoresist | High | Measured in-house | Biljana Stamenic | 2014 | |
| Ta2O5 (IBD) | HF ("Buffered HF Improved", Transene) | 0.4 | None | Photoresist | High | Measured in-house | Biljana Stamenic | 2016-12 | |
| TiO2 (IBD) | HF ("Buffered HF Improved", Transene) | 1.0–2.0 | None | Photoresist | High | Measured in-house | Biljana Stamenic | 2014-12 | |
| Si (<100> crystalline) | KOH (45%) @ 87°C | ~730 | High, Crystallographic | Si3N4 - any PECVD or LPCVD Nitride | High | Measured In-House | Use Covered, Heated vertical bath (Bay 4). Slight Bubbler. | Brian Thibeault | 2017 |