Atomic Layer Deposition Recipes

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Atomic Layer Deposition (Oxford FlexAL)

Oxford FlexAL Chamber #1: Metals

Pt deposition (ALD CHAMBER 1)

• Recipe name: Ch1_TMCpPt+O3-300C
• Pt deposition rate ~ 0.5-0.6A/cyc
• recipe utilizes the ozone generator which must be first set to the following conditions:
  • O₂ flow = 250sccm
  • O₃ concentration = 15 wt%
• Conductivity data: (to be added)

Ru deposition (ALD CHAMBER 1)

• Recipe name: Ch1_Ex03Ru[HPbub]+O2-300C
• Ru deposition rate ~ 0.6-0.7A/cyc.
• Conductivity data: (to be added)

ZnO Deposition (ALD Chamber 1)

Conductive film.

• Recipe name: Ch1_DEZ+H2O-200C
• ZnO deposition rate ≈ 1.6 A/cycle
• resistivity ≈ TBA

ZnO:Al deposition (ALD CHAMBER 1)

Al-Doped ZnO for variable resisitivity.

• Recipe name: Ch1_DEZ/TMA+H2O-200C
  • The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.
• Al dose fraction = 5% for lowest resistivity
• ZnO deposition rate ~ 1.7A/cyc
• resistivity ~ 4200uOhm.cm (390A film)

Oxford FlexAL Chamber #3: Dielectrics

Al₂O₃ deposition (ALD CHAMBER 3)

• Recipe name: Ch3_TMA+H2O-300C
  • Al₂O₃ deposition rate ~ 1A/cyc
• Recipe Name: CH3_TMA+H2O-XYZ?
  • TBD

AlN deposition (ALD CHAMBER 3)

• Recipe name: Ch3_TMA+100W/20N*-300C
  • AlN deposition rate ~ t.b.d.
  • Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.

HfO₂ deposition (ALD CHAMBER 3)

• Recipe name: Ch3_TEMAH+H2O-300C
  • HfO₂ deposition rate ~ 0.9-1.0A/cyc
  • Note: deposition shows significant parasitic growth (via CVD channel) if H₂O purge/pump times are not sufficient.

SiO₂ deposition (ALD CHAMBER 3)

• Recipe name: Ch3_TDMAS+250W/O*-300C
  • SiO₂ deposition rate ~ 0.7-0.8A/cyc
  • Recipe utilizes an O* plasma @ 250W, 5mTorr pressure

ZrO₂ deposition (ALD CHAMBER 3)

• Recipe name: Ch3_TEMAZ+H2O-300C
  • ZrO₂ deposition rate ~ 0.9-1.0A/cyc
  • Not directly characterized since results are basically the same as the HfO₂ process above.

TiO₂ deposition (ALD CHAMBER 3)

• Recipe name: Ch3_TDMAT+H2O-300C
  • TiO₂ deposition rate ~ 0.6A/cyc
  • Note: deposition shows parasitic growth (via CVD channel) if H₂O purge/pump times are not sufficient.

TiN deposition (ALD CHAMBER 3)

• Recipe name: Ch3_TDMAT+N*/H*-300C
  • TiN deposition rate ~ 0.7A/cyc
  • Conductivity data: (to be added)