Rapid Thermal Processor (AET RX6)

Rapid Thermal Processor (AET RX6) Tool Type Vacuum Deposition Location Bay 3 Supervisor Bill Millerski Supervisor Phone (805) 893-2655 Supervisor E-Mail wmillerski@ucsb.edu Description PECVD Plasma Therm 790 For Oxides And Nitrides Manufacturer Plasma-Therm Vacuum Deposition Recipes Sign up for this tool

About

Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO₂, Si₃N₄, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.

Detailed Specifications

• Max. Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 3 min.
• Maximum ramp rate of 50°C/Sec.
• Oxygen, Nitrogen and Forming Gas flows up to 10LPM.
• TC use for anneals up to 1200°C
• Windows-based process monitoring and control software by Sedona Visual Controls

Max temp/Time

Temperature	Time
1000°C	1 Hour
1100°C	10 min
1200°C	3 min
1300°C	10 sec

Documentation

• Operating Instuctions